MT46V64M8FN-6 IT:F TR

The MT46V64M8FN-6 IT:F TR is a 512 Mbit DDR SDRAM organized as 64M × 8 with a parallel memory interface in a 60-ball FBGA (10 mm × 12.5 mm) package. It implements an internal, pipelined double-data-rate architecture with four internal banks to deliver two data accesses per clock cycle.

Targeted for designs that require compact 512 Mbit DDR memory at industrial operating temperatures, this device supports a 167 MHz clock rate (DDR333 speed grade -6), a 2.3 V to 2.7 V supply range, and operating temperatures from −40 °C to +85 °C.

Key Features

• Core Architecture Internal, pipelined DDR architecture providing two data transfers per clock cycle and four internal banks for concurrent operation.
• Memory Organization 512 Mbit capacity organized as 64M × 8 with support for standard DRAM refresh (8K refresh cycles).
• Performance & Timing Rated for a 167 MHz clock frequency (DDR333, speed grade -6) with specified data-out windows and an access time of 700 ps. Programmable burst lengths of 2, 4, or 8 are supported.
• Data Capture & Interface Bidirectional data strobe (DQS) transmitted/received with data for source-synchronous capture; differential clock inputs (CK/CK#) and command timing on positive CK edges.
• Power & I/O Designed for 2.3 V to 2.7 V operation (VDD/VDDQ around 2.5 V per datasheet), with 2.5 V I/O signaling (SSTL_2 compatible per datasheet descriptions).
• Package 60-ball FBGA (10 mm × 12.5 mm) compact package suitable for space-constrained designs.
• Temperature Range Industrial grade operation from −40 °C to +85 °C (TA), indicated by the IT temperature option.
• Reliability & Refresh Supports auto refresh and self-refresh options (self-refresh not available on some device variants per datasheet notes); 8192-cycle refresh count for standard operation.

Typical Applications

• Industrial Control Systems Use as system DRAM where industrial temperature range (−40 °C to +85 °C) and compact FBGA packaging are required.
• Embedded Memory Subsystems Integration as 512 Mbit parallel DDR memory for embedded platforms needing pipelined DDR architecture and programmable burst lengths.
• Networking and Communication Equipment Local buffering and packet memory that benefit from dual-data-rate transfers and source-synchronous DQS signaling.

Unique Advantages

• DDR Double-Data-Rate Operation: Two data accesses per clock cycle increase effective throughput without increasing clock frequency.
• Industrial Temperature Capability: Rated for −40 °C to +85 °C, enabling deployment in temperature-demanding environments.
• Compact 60-ball FBGA: Small 10 mm × 12.5 mm package reduces PCB footprint for space-constrained designs.
• Source-Synchronous Data Capture: Bidirectional DQS with DLL alignment supports reliable read/write timing and center/edge alignment for read and write operations.
• Flexible Timing Options: Programmable burst lengths (2/4/8) and multiple speed-grade timing options accommodate a range of design timing requirements.
• Standard DDR Signaling Levels: 2.5 V I/O compatibility (SSTL_2 per datasheet) aligns with common memory interface standards.

Why Choose MT46V64M8FN-6 IT:F TR?

The MT46V64M8FN-6 IT:F TR delivers 512 Mbit of parallel DDR SDRAM capacity in a compact 60-ball FBGA package, combining DDR pipelined architecture, source-synchronous DQS, and industrial temperature operation. Its 2.3 V–2.7 V supply range and DDR333 timing grade make it appropriate for systems that need predictable DDR behavior and compact board-level integration.

This device suits engineers designing industrial and embedded platforms requiring a verified 64M × 8 DRAM organization, programmable burst operation, and standard 2.5 V I/O signaling. The combination of package, timing options, and temperature rating supports long-term deployment in space-constrained, temperature-challenged applications.

Request a quote or submit an inquiry to get pricing and availability details for the MT46V64M8FN-6 IT:F TR and to discuss integration support for your design.