MT46V64M8P-5B L IT:J TR

The MT46V64M8P-5B L IT:J TR is a 512Mbit DDR SDRAM organized as 64M × 8 with a parallel memory interface in a 66-TSSOP (0.400", 10.16mm width) package. It implements an internal pipelined double-data-rate architecture with bidirectional data strobe (DQS) to support source-synchronous data capture for read and write operations.

This device targets designs requiring compact, parallel DDR memory with industrial temperature capability and 2.5V-class I/O. Key value comes from high-rate DDR transfers, programmable burst control, and support for concurrent bank operation to improve throughput in memory subsystems.

Key Features

• Core Architecture Internal pipelined Double-Data-Rate (DDR) architecture providing two data accesses per clock cycle; DLL aligns DQ and DQS transitions with CK.
• Memory Organization 512 Mbit capacity configured as 64M × 8 with four internal banks for concurrent operation.
• Interface & Timing Parallel memory interface with differential clock inputs (CK and CK#); commands entered on positive CK edge. Programmable burst lengths of 2, 4, or 8; write cycle time (word page) of 15 ns; clock frequency up to 200 MHz for the -5B speed grade.
• Data Capture & Masking Bidirectional DQS transmitted/received with data for source-synchronous capture; data mask (DM) supported for masking write data.
• Power Nominal supply range 2.5 V to 2.7 V compatible with 2.5 V I/O (SSTL_2 compatible per datasheet notes).
• Refresh & Refresh Timing Auto refresh supported; 8K refresh cycles (64 ms, 8192-cycle for commercial and industrial device options per datasheet).
• Performance Windows (‑5B) -5B speed grade supports 200 MHz clock rate with a data-out window of 1.6 ns, access window ±0.70 ns, and DQS‑DQ skew of +0.40 ns.
• Package & Temperature 66-TSSOP package (0.400", 10.16 mm width); operating temperature range −40 °C to +85 °C (TA).
• Reliability Options Longer-lead TSOP option noted in datasheet for improved reliability (OCPL); self refresh available (with device-option notes in datasheet).

Unique Advantages

• High-rate DDR transfers: 200 MHz clock capability (‑5B speed grade) enables double-data-rate operation for increased effective bandwidth.
• Compact package footprint: 66‑TSSOP (10.16 mm width) provides a space-efficient form factor for board-level integration.
• Flexible burst and bank control: Programmable burst lengths and four internal banks allow designers to optimize access patterns for throughput.
• Industry temperature rating: Specified operation from −40 °C to +85 °C supports deployments in industrial-temperature environments.
• Source-synchronous data capture: Bidirectional DQS and DLL alignment improve timing margin for read and write transfers.
• Standard 2.5 V-class supply: Operates across 2.5 V to 2.7 V supply range to match 2.5 V I/O systems.

Why Choose IC DRAM 512MBIT PARALLEL 66TSOP?

The MT46V64M8P-5B L IT:J TR provides a compact, industrial-temperature DDR SDRAM solution with clearly defined timing and power characteristics from Micron Technology Inc. Its 64M × 8 organization, four-bank architecture, and source-synchronous DQS support make it suitable for designs that need predictable parallel DDR memory behavior in a 66‑TSSOP package.

This device is appropriate for engineers specifying a 512 Mbit DDR memory component where controlled timing windows, programmable burst lengths, and 2.5 V I/O compatibility are required. The datasheet-backed specifications enable straightforward integration and validation within memory subsystems.

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