MT46V64M8P-6T IT:F

The MT46V64M8P-6T IT:F is a 512 Mbit DDR SDRAM device organized as 64M × 8 with a parallel memory interface. It implements a double-data-rate architecture with internal pipelining and source-synchronous data capture for high-throughput, low-latency memory access.

Designed for applications requiring a compact 66‑TSSOP package and industrial temperature operation, this device offers a 2.3 V–2.7 V supply range and a 167 MHz clock rate (speed grade -6T), making it suitable for systems that need reliable volatile memory in space‑constrained board designs.

Key Features

• DDR architecture  Internal pipelined double-data-rate design provides two data transfers per clock cycle and includes a DLL to align DQ and DQS transitions with CK.
• Memory capacity & organization  512 Mbit total capacity arranged as 64M × 8 with four internal banks for concurrent operation.
• Performance  Rated for a 167 MHz clock frequency (speed grade -6T) with an access time of 700 ps and a write cycle time (word page) of 15 ns.
• Source-synchronous interface  Bidirectional data strobe (DQS) transmitted/received with data for source-synchronous capture; differential clock inputs (CK/CK#) and write data mask (DM) support.
• Programmable bursts and refresh  Supports programmable burst lengths (2, 4, or 8), auto refresh, and self refresh options as specified in device revisions.
• Power  Operates from a 2.3 V to 2.7 V supply range compatible with 2.5 V I/O signaling.
• Package & thermal  66‑TSSOP package (0.400" / 10.16 mm width) and an operating temperature range of −40°C to +85°C (TA) for industrial-grade deployments.

Typical Applications

• Embedded memory subsystems  Provides 512 Mbit volatile DDR memory in compact board designs requiring a small‑outline 66‑TSSOP package.
• Industrial controllers  Industrial temperature rating (−40°C to +85°C) and DDR performance make it suitable for control systems that require reliable high-speed volatile storage.
• Legacy DDR system modules  Speed grade compatibility information in the product datasheet lists PC3200/PC2700/PC2100 timing grades for integration into legacy DDR platforms and modules where those timing profiles are required.

Unique Advantages

• Industrial temperature support: Enables deployment in environments from −40°C to +85°C without additional thermal qualification.
• Compact TSSOP footprint: 66‑TSSOP package (10.16 mm width) reduces board area compared with larger packages while retaining a pinout for parallel DDR interfaces.
• Low-voltage operation: 2.3 V–2.7 V supply range supports 2.5 V I/O signaling and helps minimize system power.
• Source-synchronous data capture: DQS and differential clock inputs allow reliable high-speed read/write timing alignment.
• Flexible burst and refresh options: Programmable burst lengths and supported refresh modes (auto refresh and self refresh options) provide flexibility for system memory management.
• Documented timing grades: Datasheet timing tables include speed-grade and data-out window parameters for predictable integration at 167 MHz clock rates.

Why Choose MT46V64M8P-6T IT:F?

The MT46V64M8P-6T IT:F delivers a compact, industrial‑temperature DDR SDRAM solution with 512 Mbit density, 64M × 8 organization, and source‑synchronous DDR signaling. Its 66‑TSSOP package and 2.3 V–2.7 V operating range make it suitable for space‑constrained systems that require standard DDR timing and reliable operation across a broad temperature range.

This device is appropriate for engineers specifying parallel DDR memory in embedded and industrial designs where documented timing grades, programmable burst lengths, and standard refresh options are required. Product documentation from the manufacturer provides the timing and interface details needed for integration and qualification in system designs.

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