MT46V64M8TG-5B:J

The MT46V64M8TG-5B:J is a 512 Mbit volatile DRAM device implemented as DDR SDRAM with a 64M × 8 organization. It provides a parallel memory interface and is supplied in a 66‑TSSOP (0.400", 10.16 mm width) package.

This device is suitable for designs that require a 512 Mbit parallel DDR memory solution operating at up to a 200 MHz clock frequency, with a 2.5 V–2.7 V supply and an operating temperature range of 0 °C to 70 °C.

Key Features

• Memory Type & Technology Volatile DRAM implemented as DDR SDRAM, providing synchronous double data rate operation.
• Density & Organization 512 Mbit capacity organized as 64M × 8 for byte-wide data interfacing.
• Performance Supports a clock frequency up to 200 MHz and a specified access time of 700 ps; write cycle time (word/page) is 15 ns.
• Voltage Operates from a 2.5 V to 2.7 V supply range.
• Package Available in a 66‑TSSOP (0.400", 10.16 mm width) package suitable for surface-mount assembly.
• Interface Parallel memory interface tailored for systems requiring parallel DDR connectivity.
• Operating Temperature Specified for ambient operating temperatures from 0 °C to 70 °C (TA).

Typical Applications

• Parallel DDR memory subsystems Acts as a 512 Mbit parallel DDR SDRAM device for system-level memory expansion or buffering.
• Embedded system memory Provides byte-wide DDR storage in compact board-level designs that require a 66‑TSSOP footprint.
• Board-level DRAM replacement or upgrade Used where a 64M × 8 DDR memory organization and 2.5 V supply compatibility are required.

Unique Advantages

• 512 Mbit density Offers sizable on-board memory capacity in a single 64M × 8 device to simplify memory population.
• DDR SDRAM operation Double data rate architecture with a 200 MHz clock capability supports higher effective data throughput compared to single-rate SDRAM at the same clock.
• Compact TSSOP package 66‑TSSOP (0.400", 10.16 mm) package enables dense PCB layouts while maintaining a parallel interface.
• Standard supply compatibility Operates from a 2.5 V–2.7 V supply, matching common DDR power rails.
• Clear thermal specification Rated for operation across 0 °C to 70 °C ambient, providing defined limits for system thermal design.

Why Choose IC DRAM 512MBIT PARALLEL 66TSOP?

The MT46V64M8TG-5B:J combines a 512 Mbit DDR SDRAM architecture with a 64M × 8 organization and parallel interface to address board-level memory needs where a 2.5 V supply and a 66‑TSSOP package are preferred. Its performance parameters—200 MHz clock support, 700 ps access time, and 15 ns write cycle time—provide measurable timing characteristics for system integration.

Manufactured by Micron Technology Inc., this device is suited for designs requiring a defined DDR memory footprint and clear electrical and thermal specifications. It is appropriate for engineers and procurement teams specifying a 512 Mbit parallel DDR solution with a compact surface-mount package.

Request a quote or submit a quote for the MT46V64M8TG-5B:J to obtain pricing and availability information for your project.