MT46V64M8TG-5B:J TR

The MT46V64M8TG-5B:J TR is a 512 Mbit DDR SDRAM organized as 64M × 8 and provided in a 66‑TSSOP (0.400", 10.16 mm width) package. It implements a parallel memory interface with a clock frequency of 200 MHz and an access time of 700 ps.

Operating from a 2.5 V to 2.7 V supply and rated for an ambient temperature range of 0°C to 70°C, the device delivers predictable timing characteristics including a 15 ns write cycle time (word page) for board-level DRAM implementations.

Key Features

• Core / Memory 512 Mbit DRAM organized as 64M × 8 in DDR (SDRAM - DDR) architecture for parallel memory applications.
• Performance 200 MHz clock frequency, 700 ps access time and 15 ns write cycle time (word page) provide defined timing for system memory designs.
• Power Nominal supply voltage range of 2.5 V to 2.7 V to match system DDR power rails.
• Interface Parallel memory interface suitable for board-level integration in parallel DDR designs.
• Package and Mounting Supplied in a 66‑TSSOP (0.400", 10.16 mm width) package; mounting type: volatile (standard DRAM device).
• Environmental / Temperature Operating ambient temperature range of 0°C to 70°C (TA).

Typical Applications

• System memory for parallel DDR designs Provides 512 Mbit DDR SDRAM capacity in a compact 66‑TSSOP package for board-level memory implementations that use a parallel interface.
• Board-level DRAM modules Suitable for integration on memory modules or PCBs requiring a 64M × 8 organization and standard DDR signaling.
• Replacement or upgrade in legacy parallel DDR systems Matches common parallel DDR electrical and timing parameters (2.5–2.7 V supply, defined access and cycle times) for system-level replacements or upgrades.

Unique Advantages

• Compact 66‑TSSOP footprint: Enables higher density board layouts while providing through-package DDR memory capacity.
• Defined timing performance: 200 MHz clock frequency, 700 ps access time, and 15 ns write cycle time (word page) support predictable memory timing in designs.
• Standard DDR voltage range: 2.5 V to 2.7 V supply range aligns with common DDR power rails for compatibility with existing systems.
• Parallel interface: Simplifies integration into designs that require conventional parallel DDR memory connections.
• Clear operating range: 0°C to 70°C ambient rating provides defined use conditions for commercial temperature environments.

Why Choose IC DRAM 512MBIT PARALLEL 66TSOP?

The MT46V64M8TG-5B:J TR positions itself as a straightforward 512 Mbit parallel DDR SDRAM solution, offering defined electrical and timing specifications for board-level memory applications. Its 64M × 8 organization, 66‑TSSOP package, and 2.5–2.7 V supply requirement make it suitable for designs that need a compact DDR memory device with predictable performance.

Engineers and procurement teams looking for a DRAM device with explicit clock, access, and cycle time parameters—as well as a standard commercial temperature rating—will find this part appropriate for integration into parallel DDR memory subsystems and module designs.

Request a quote or contact sales to obtain pricing, lead time, and availability information for MT46V64M8TG-5B:J TR.