MT46V64M8TG-6T IT:F TR

The MT46V64M8TG-6T IT:F TR is a 512 Mbit volatile DRAM device organized as 64M × 8 and implemented in DDR SDRAM architecture. It provides a parallel memory interface with a 66‑TSSOP package footprint for designs that require on-board DDR memory density in a compact form factor.

Designed for systems that require DDR SDRAM performance at a 167 MHz clock frequency and support a wide operating temperature range, this device targets applications needing predictable timing, low-voltage operation, and a compact package solution.

Key Features

• Memory Core: 512 Mbit capacity organized as 64M × 8, implemented as DDR SDRAM for volatile data storage.
• Performance: Rated clock frequency of 167 MHz with an access time of 700 ps and a write cycle time (word/page) of 15 ns, enabling rapid read/write operations.
• Interface: Parallel memory interface suitable for systems designed around parallel DDR memory connections.
• Power: Low-voltage operation across a 2.3 V to 2.7 V supply range to support energy-conscious designs.
• Package & Mounting: Supplied in a 66‑TSSOP (0.400", 10.16 mm width) package for surface-mount PCB integration.
• Temperature Range: Qualified for operation from −40°C to 85°C (TA) to cover a wide range of ambient conditions.
• Manufacturer: Built by Micron Technology Inc., a known supplier of memory components.

Typical Applications

• Embedded memory subsystems: Provides 512 Mbit DDR storage for systems that require parallel DRAM integration on-board.
• Industrial electronics: Operates across −40°C to 85°C, supporting designs that must function in wide ambient conditions.
• Compact PCB assemblies: 66‑TSSOP packaging allows integration where board space and surface-mount form factor are constraints.

Unique Advantages

• High-density memory: 512 Mbit capacity (64M × 8) enables increased storage without multiple devices.
• DDR SDRAM architecture: Parallel DDR interface and 167 MHz clock support fast data throughput for memory-intensive operations.
• Low-voltage operation: 2.3 V to 2.7 V supply range reduces power draw and supports low-voltage system designs.
• Predictable timing: 700 ps access time and 15 ns write cycle time provide clear timing parameters for system integration and memory timing budgets.
• Wide operating temperature: −40°C to 85°C rating supports deployments across varied thermal environments.
• Compact package: 66‑TSSOP (0.400", 10.16 mm width) eases placement in space-constrained PCB layouts.

Why Choose MT46V64M8TG-6T IT:F TR?

The MT46V64M8TG-6T IT:F TR combines DDR SDRAM architecture with a 512 Mbit density in a compact 66‑TSSOP package, offering a balance of performance and board-level integration. With explicit timing parameters (167 MHz clock, 700 ps access time, 15 ns write cycle) and a defined low-voltage supply range, it is suitable for designers who need verifiable memory performance and predictable power characteristics.

Manufactured by Micron Technology Inc., this device is targeted for engineers and procurement teams seeking a high-density parallel DDR memory component for systems requiring stable operation across −40°C to 85°C and standard surface-mount assembly practices.

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