MT46V64M8TG-6T IT:D TR

The MT46V64M8TG-6T IT:D TR is a 512 Mbit DDR SDRAM organized as 64M × 8 with a parallel memory interface in a 66‑pin TSSOP package. It implements a double-data-rate architecture with internal DLL and source-synchronous DQS to support two data accesses per clock cycle.

Designed for board‑level memory expansion where a compact 66‑TSSOP footprint, 2.3–2.7 V supply operation, and industrial temperature capability (−40 °C to +85 °C) are required, the device provides deterministic timing and programmable burst lengths for system memory buffering and working storage.

Key Features

• Core / Architecture  Internal pipelined DDR architecture with two data transfers per clock and a DLL to align DQ/DQS transitions with the clock.
• Memory Organization  512 Mbit total capacity arranged as 64M × 8 with four internal banks, suitable for parallel DDR memory implementations.
• Data Strobe and Clocking  Bidirectional data strobe (DQS) transmitted/received with data for source‑synchronous capture and differential clock inputs (CK and CK#).
• Programmable Burst and Mask  Programmable burst lengths of 2, 4, or 8 and data mask (DM) for write data masking.
• Performance / Timing  Specified for up to 167 MHz clock frequency (speed grade 6T), access time ~700 ps and write cycle time (word page) 15 ns; data‑out windows and DQS‑DQ skew are defined in the datasheet.
• Power  VDD/VDDQ supply range 2.3 V to 2.7 V (typical +2.5 V ± tolerances listed in the datasheet).
• Package  66‑pin TSSOP (0.400", 10.16 mm width) in a longer‑lead TSOP option for improved board‑level reliability.
• Temperature Range  Industrial operating temperature range: −40 °C to +85 °C (TA).
• Reliability / Refresh  Supports auto refresh and self refresh options; refresh count 8K cycles as specified for the 64M × 8 configuration.

Typical Applications

• Board‑level DDR memory  Provides on‑board working memory in designs that require a parallel DDR SDRAM in a compact 66‑TSSOP footprint.
• Industrial electronics  Suited for equipment operating within −40 °C to +85 °C where a 512 Mbit DDR device is required for buffering or temporary storage.
• System memory buffering  Useful for designs needing programmable burst transfers, source‑synchronous DQS capture, and deterministic access windows for data buffering.

Unique Advantages

• DDR double‑data‑rate transfers: Two data accesses per clock cycle increase effective throughput without requiring higher clock rates.
• Source‑synchronous DQS with DLL: DQS alignment and DLL support improve timing margin for read/write operations and predictable data capture.
• Industrial temperature support: Specified operation from −40 °C to +85 °C addresses applications requiring extended temperature operation.
• Compact TSOP package: 66‑TSSOP (10.16 mm width) provides a small board footprint while retaining robust lead length for reliability.
• Flexible timing and burst control: Programmable burst lengths (2, 4, 8) and defined timing grades (including 6T speed grade at 167 MHz) allow tailoring to system performance needs.
• Standard 2.5 V signaling: VDD/VDDQ operation in the 2.3–2.7 V range supports SSTL‑2 style I/O environments documented in the datasheet.

Why Choose IC DRAM 512MBIT PAR 66TSOP?

The MT46V64M8TG-6T IT:D TR delivers a compact, industry‑rated DDR SDRAM solution with clear timing definitions, programmable burst lengths, and source‑synchronous DQS/DLL support. Its 64M × 8 organization and 512 Mbit capacity make it suitable for designs that require parallel DDR memory in a 66‑pin TSSOP package.

This device is appropriate for engineers specifying deterministic memory timing, industrial temperature operation, and a small board footprint. The set of documented timing grades, refresh behavior, and electrical supply window provide the verifiable specifications needed for integration into board‑level memory subsystems.

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