MT46V64M8TG-6T:D TR

The MT46V64M8TG-6T:D TR is a 512 Mbit DDR SDRAM device organized as 64M × 8 with a parallel memory interface. It implements a DDR architecture with source-synchronous DQS and an internal DLL to support double-data-rate transfers for designs requiring higher effective data throughput.

Designed for commercial-temperature systems (0°C to 70°C) in a compact 66‑TSSOP package, the device targets applications that need a small-footprint, low‑voltage (2.3 V–2.7 V) DDR memory solution with programmable burst lengths and standard refresh support.

Key Features

• Core / Architecture Internal pipelined double-data-rate (DDR) architecture delivering two data accesses per clock cycle; includes a DLL and differential clock inputs (CK/CK#) for timing alignment.
• Memory Organization 512 Mbit capacity organized as 64M × 8 with four internal banks for concurrent operation.
• Interface and Data Handling Parallel DDR interface with bidirectional data strobe (DQS) transmitted/received with data, data mask (DM) support, and programmable burst lengths of 2, 4, or 8.
• Performance / Timing Rated for 167 MHz clock operation (speed grade -6T), with an access time of 700 ps and a write cycle time (word/page) of 15 ns; timing grade -6T supports CL = 2.5 operation.
• Power Low-voltage operation with VDD/VDDQ range of 2.3 V to 2.7 V (nominal 2.5 V ± tolerance per device grade).
• Refresh and Power Management Supports auto refresh and self refresh modes to maintain data during refresh cycles.
• Package & Temperature 66‑TSSOP (0.400", 10.16 mm width) package; commercial operating temperature range 0°C to 70°C.

Typical Applications

• Embedded memory expansion — System boards and modules that require a 512 Mbit parallel DDR SDRAM for program or data buffering.
• Compact consumer electronics — Small-footprint designs benefiting from the 66‑TSSOP package and low-voltage operation.
• Interface and buffering subsystems — Use as temporary storage or burst-buffer memory where programmable burst lengths and source‑synchronous DQS simplify timing capture.

Unique Advantages

• Double-data-rate throughput: Delivers two data accesses per clock cycle via DDR architecture, increasing effective bandwidth without changing clock rate.
• Source-synchronous data capture: Bidirectional DQS transmitted/received with data and DLL alignment improve read/write timing stability.
• Compact TSOP footprint: 66‑TSSOP package (0.400", 10.16 mm) enables space-constrained board layouts while providing standard TSOP reliability.
• Flexible timing options: Speed grade -6T supports 167 MHz (CL=2.5) operation and programmable burst lengths for adaptable system timing and access patterns.
• Low-voltage operation: 2.3 V–2.7 V supply range reduces I/O power envelope for systems designed around 2.5 V signaling.

Why Choose MT46V64M8TG-6T:D TR?

The MT46V64M8TG-6T:D TR provides a verified 512 Mbit DDR SDRAM solution that combines DDR throughput, source‑synchronous DQS, and a compact 66‑TSSOP package. Its 64M × 8 organization, four internal banks, and programmable burst lengths make it suitable for systems that require deterministic DDR behavior in a small footprint.

With 167 MHz rated operation, low-voltage supply range, and standard refresh/self‑refresh support, this device is appropriate for commercial-temperature designs that need reliable, board‑level DDR memory integration with clear timing and power characteristics.

Request a quote or submit an RFQ to inquire about availability, lead times, and ordering options for the MT46V64M8TG-6T:D TR.