MT46V64M8TG-75 L:D TR

The MT46V64M8TG-75 L:D TR is a 512 Mbit DDR SDRAM device in a parallel memory interface designed for systems requiring volatile high-speed synchronous DRAM. It implements a double-data-rate architecture with source-synchronous data strobe and an internal DLL to align DQ/DQS transitions with the clock.

Targeted at applications that need a compact board-level DDR memory solution, the device offers a 66‑TSSOP package, 133 MHz clock support, and a 2.3 V–2.7 V supply window to match standard 2.5 V DDR signaling environments.

Key Features

• DDR SDRAM architecture Internal pipelined double-data-rate operation providing two data accesses per clock cycle and bidirectional data strobe (DQS) for source-synchronous data capture.
• Memory capacity & organization 512 Mbit total density with a 64M × 8 organization and four internal banks for concurrent operation.
• Timing & performance Rated for a 133 MHz clock frequency with an access time of 750 ps and programmable burst lengths of 2, 4, or 8 for flexible data transfers.
• Signal integrity & clocking Differential clock inputs (CK/CK#) and an on-die DLL to align data and strobe transitions; DQS is edge-aligned for reads and center-aligned for writes.
• Power & I/O Operates from a 2.3 V to 2.7 V supply range with 2.5 V I/O signaling compatibility.
• Refresh and reliability features Supports auto refresh (8K refresh cycles) and optional self-refresh modes as documented in the device specification.
• Package & thermal Available in a 66‑pin TSSOP (0.400", 10.16 mm width) package and specified for an operating ambient temperature range of 0 °C to 70 °C (TA).
• Parallel memory interface Standard parallel DDR memory interface with data mask (DM) for masked writes and concurrent auto-precharge support.

Typical Applications

• Embedded memory subsystems Board-level DDR memory for embedded designs that require a 512 Mbit parallel DDR SDRAM in a compact TSOP footprint.
• Legacy DDR platforms Replacement or upgrade memory for systems using parallel DDR SDRAM with 2.5 V I/O and standard DDR timing at 133 MHz.
• Consumer and industrial electronics On-board DRAM for devices operating within a 0 °C to 70 °C ambient range where a 66‑TSSOP package form factor is required.

Unique Advantages

• Compact TSOP package: 66‑pin TSSOP (10.16 mm width) enables dense board layouts while preserving reliable pinout for parallel DDR implementations.
• Source-synchronous data capture: DQS transmitted/received with data and DLL alignment improves timing margins for high-speed transfers at DDR rates.
• Flexible timing and burst control: Programmable burst lengths (2, 4, 8) and defined CAS latency/timing options facilitate tuning for a range of system clocks and throughput needs.
• Standard DDR signaling: 2.3 V–2.7 V supply compatibility and 2.5 V I/O support make integration straightforward in 2.5 V DDR environments.
• Four internal banks: Internal bank structure supports concurrent operations to improve effective memory throughput in multi-access workloads.
• Defined operating window: Specified operating temperature (0 °C to 70 °C) and explicit timing parameters provide predictable behavior for design verification.

Why Choose IC DRAM 512MBIT PARALLEL 66TSOP?

The IC DRAM 512MBIT PARALLEL 66TSOP (MT46V64M8TG-75 L:D TR) delivers a compact, board-level DDR SDRAM solution with a 512 Mbit density, source-synchronous DQS, and a defined 2.3 V–2.7 V supply range. Its 66‑TSSOP package and 133 MHz rated clock support make it suitable for systems that require parallel DDR memory in space-constrained layouts.

Engineers designing or maintaining systems that depend on established DDR signaling and predictable timing will benefit from the device's programmable burst lengths, internal DLL, and four-bank architecture, which together enable deterministic performance and straightforward integration.

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