MT46V64M8TG-75:D

The MT46V64M8TG-75:D is a 512 Mbit volatile DRAM device implemented as DDR SDRAM in a 64M × 8 organization. It provides a parallel memory interface in a 66‑TSSOP package and operates with a 133 MHz clock frequency.

This device is intended for designs that require on‑board parallel DRAM memory with defined timing and power characteristics, offering a compact package and standard operating ranges for system integration.

Key Features

• Core Technology DDR SDRAM architecture implemented as SDRAM - DDR for parallel memory operation.
• Memory Capacity & Organization 512 Mbit total capacity organized as 64M × 8, providing byte-wide parallel data paths.
• Performance 133 MHz clock frequency with a specified access time of 750 ps and a write cycle time (word/page) of 15 ns.
• Power Operating supply voltage range of 2.3 V to 2.7 V.
• Package 66‑TSSOP (0.400", 10.16 mm width) supplier device package for board-level mounting.
• Operating Range Specified ambient operating temperature range of 0°C to 70°C (TA).
• Interface & Format Parallel memory interface; device format defined as DRAM and classified as volatile memory.

Typical Applications

• Parallel memory subsystems — Provides 512 Mbit DDR SDRAM in a 66‑TSSOP package for designs requiring a parallel memory interface and byte-wide data lanes.
• Board-level DRAM expansion — Use as a 64M × 8 DRAM device to increase system memory capacity on motherboards and memory modules.
• Prototyping and evaluation — Suitable for evaluation boards and development platforms that target a 133 MHz DDR clock and defined timing parameters.

Unique Advantages

• Defined DDR SDRAM architecture — Clear SDRAM - DDR implementation supports parallel memory designs requiring DDR timing.
• Compact 66‑TSSOP package — Space-efficient package (0.400" / 10.16 mm width) for board layouts with constrained area.
• Deterministic timing — Specified access time (750 ps) and write cycle time (15 ns) enable predictable memory performance for timing-sensitive designs.
• Wide operating voltage range — 2.3 V to 2.7 V supply range supports systems designed around low-voltage DRAM domains.
• Standard commercial temperature — 0°C to 70°C ambient range aligns with common commercial electronics environments.

Why Choose IC DRAM 512MBIT PARALLEL 66TSOP?

The MT46V64M8TG-75:D positions as a straightforward 512 Mbit DDR SDRAM solution for parallel memory implementations, combining a 64M × 8 organization with defined timing and a compact 66‑TSSOP footprint. Its electrical and timing specifications provide the predictability required for board-level memory expansion and system memory subsystems.

This device is suitable for designers and procurement teams specifying commercial-temperature, low-voltage DRAM components with parallel interfaces and clear performance parameters. Its compact package and explicit supply and timing ranges make it a practical choice for controlled, repeatable memory integration.

Request a quote or contact sales to discuss pricing, availability, and to submit a purchasing inquiry for the MT46V64M8TG-75:D.