MT46V64M8TG-6T:F TR

The MT46V64M8TG-6T:F TR is a 512 Mbit DDR SDRAM device organized as 64M × 8 with a parallel DDR interface in a 66‑TSSOP package. It implements an internal, pipelined double-data-rate architecture with source-synchronous DQS and DLL alignment to support high-throughput board-level memory designs.

This device targets commercial‑temperature applications (0°C to 70°C) that require a compact 66‑TSSOP package, 2.3 V–2.7 V supply operation, and DDR timing support up to a 167 MHz clock rate (speed grade -6T).

Key Features

• Core / Architecture Internal pipelined DDR architecture providing two data transfers per clock cycle, with DLL for DQ/DQS alignment and differential clock inputs (CK/CK#).
• Memory Organization 512 Mbit capacity arranged as 64M × 8 with four internal banks for concurrent operation and row/column addressing as specified for the 64M×8 configuration.
• Performance Supports a clock frequency up to 167 MHz (speed grade -6T) with an access time of 700 ps and a word/page write cycle time of 15 ns.
• Interface and Data Integrity Parallel DDR interface with bidirectional data strobe (DQS), data mask (DM) support, and source‑synchronous data capture.
• Power Nominal supply range 2.3 V to 2.7 V (VDD / VDDQ range provided in product specifications).
• Refresh and Mode Auto-refresh support and family options that include self-refresh; 8192 refresh cycles per 64 ms are specified for commercial grade devices.
• Package & Temperature 66‑TSSOP (0.400", 10.16 mm width) package; operating temperature range 0°C to 70°C (TA).
• Programmability Programmable burst lengths of 2, 4, or 8 and support for multiple CAS latency/timing speed grades in the device family.

Typical Applications

• System memory Board-level DDR memory for designs needing 512 Mbit parallel DDR storage with supported timing up to 167 MHz.
• Memory modules Integration on memory expansion or module boards where 66‑TSSOP packaging and 64M×8 organization are required.
• Embedded systems Use in commercial-temperature embedded designs that require compact, board-mount DDR SDRAM density and standard DDR features (DQS, DLL, DM).

Unique Advantages

• High-density 512 Mbit capacity: 64M × 8 organization delivers substantial memory in a single device for compact designs.
• DDR performance at 167 MHz: Speed grade -6T supports 167 MHz operation with double-data-rate transfers for increased throughput.
• Source-synchronous data capture: Bidirectional DQS and DLL alignment improve timing margin for read and write operations.
• Flexible burst and timing options: Programmable burst lengths (2/4/8) and multiple CAS latency timing grades available in the device family enable tuning to system requirements.
• Board-friendly 66‑TSSOP package: Longer-lead 66‑TSSOP (0.400", 10.16 mm) facilitates compact board layouts and reliable assembly.
• Commercial temperature rating: Rated for 0°C to 70°C to match standard commercial-grade system requirements.

Why Choose IC DRAM 512MBIT PAR 66TSOP?

The MT46V64M8TG-6T:F TR provides a compact, board-level DDR SDRAM solution delivering 512 Mbit density, parallel DDR interface features, and timing support up to 167 MHz. Its 66‑TSSOP package and 2.3 V–2.7 V supply range make it suitable for commercial-temperature designs that require standard DDR functionality such as DQS, DLL alignment, programmable burst lengths, and auto-refresh.

This device is appropriate for designers seeking a verified Micron DDR SDRAM component for system memory, module integration, or embedded applications where consistent timing characteristics and compact packaging are priorities.

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