MT46V64M8TG-6T L:F

The MT46V64M8TG-6T L:F is a 512 Mbit volatile DDR SDRAM organized as 64M × 8 with a parallel memory interface in a 66-TSSOP package. It implements a double-data-rate architecture with internal pipelined operation and four internal banks to support two data transfers per clock cycle.

Designed for board-level memory integration, this device targets systems that require compact, parallel DDR memory with a 66-pin TSOP footprint, 2.3 V–2.7 V supply range, and a commercial operating temperature of 0 °C to 70 °C.

Key Features

• Memory Architecture  Organized as 64M × 8 (512 Mbit) DDR SDRAM with four internal banks and programmable burst lengths of 2, 4, or 8.
• DDR Performance  Internal pipelined DDR architecture delivering two data accesses per clock cycle; specified clock frequency up to 167 MHz for the -6T speed grade.
• Timing and Access  Typical access characteristics include an access time of 700 ps and write cycle time (word page) of 15 ns; speed-grade timing data provided for CL and data-out windows in the datasheet.
• Interface and Signaling  Parallel memory interface with bidirectional data strobe (DQS) transmitted/received with data, and differential clock inputs (CK/CK#) for source-synchronous capture.
• Power  Operates from a 2.3 V to 2.7 V supply range (VDD/VDDQ); supports standard DDR 2.5 V I/O signaling as described in the device specification.
• Package  66-TSSOP (0.400", 10.16 mm width) long-lead TSOP option for board-level assembly; supplier device package: 66-TSOP.
• Reliability and Refresh  Supports auto refresh and 8K refresh cycle counts as specified; commercial temperature rating of 0 °C to +70 °C (TA).

Typical Applications

• Board-level Memory Expansion  Compact 66-TSSOP DDR device for adding 512 Mbit of volatile parallel memory on logic boards or memory daughtercards.
• Embedded Systems  Parallel DDR memory for embedded designs that require organized 64M × 8 storage and standard DDR signaling.
• Legacy / Form-factor Specific Designs  Replacement or design-in option where a 66-pin TSOP footprint and DDR SDRAM interface are required.

Unique Advantages

• Compact 66-TSSOP footprint: Enables dense board layouts and straightforward replacement in designs using a 66-pin TSOP package.
• DDR source-synchronous capture: Bidirectional DQS with differential clock inputs and DLL alignment supports reliable data capture at double data rate timing.
• Matched timing options: -6T speed grade supports 167 MHz operation with documented data-out windows and DQS–DQ skew parameters for predictable timing margins.
• Flexible burst and refresh control: Programmable burst lengths (2/4/8) plus auto-refresh support simplify memory access patterns and system refresh management.
• Industry-standard supply range: 2.3 V–2.7 V supply compatibility aligns with common DDR 2.5 V I/O domains for integration into existing power architectures.

Why Choose IC DRAM 512MBIT PAR 66TSOP?

The MT46V64M8TG-6T L:F provides a straightforward DDR SDRAM solution when 512 Mbit of organized parallel volatile memory is required in a compact 66-TSSOP package. Its documented timing (including access window and DQS/DQ characteristics), support for programmable burst lengths, and four internal banks make it suitable for systems that need deterministic DDR behavior and predictable integration.

This device is well suited to designers specifying a 66-pin TSOP footprint with a 2.3 V–2.7 V supply and a commercial temperature range. The combination of DDR source-synchronous features and clear speed-grade timing data supports reliable memory subsystem design and long-term maintainability.

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