MT46V64M8TG-6T L:F TR

The MT46V64M8TG-6T L:F TR is a 512 Mbit double data rate (DDR) SDRAM organized as 64M × 8 with a parallel memory interface. It implements a DDR architecture with source-synchronous data strobe (DQS), differential clock inputs and internal DLL to support synchronized data transfers.

Provided in a 66‑TSSOP (0.400", 10.16 mm width) package and specified for 0°C to 70°C ambient, this device is intended for systems that require a compact, commercial‑grade parallel DDR memory solution operating from 2.3 V to 2.7 V.

Key Features

• Core / Architecture  Internal pipelined DDR architecture providing two data accesses per clock cycle; four internal banks enable concurrent operation.
• Memory Density & Organization  512 Mbit capacity organized as 64M × 8 (16 Meg × 8 × 4 banks).
• Performance & Timing  Rated clock frequency up to 167 MHz (speed grade 6T) with an access time of 700 ps and a write cycle time (word/page) of 15 ns; programmable burst lengths of 2, 4, or 8.
• Interface & Data Path  Parallel DDR interface with differential clock inputs (CK/CK#), bidirectional data strobe (DQS) transmitted/received with data, and data mask (DM) functionality.
• Power  Operating supply voltage range VDD/VDDQ: 2.3 V to 2.7 V (DDR 2.5 V nominal); 2.5 V I/O (SSTL_2 compatible as specified in datasheet).
• System Reliability  DLL to align DQ and DQS transitions with clock, auto refresh and self refresh options (self refresh option noted in datasheet), and concurrent auto precharge support.
• Package & Temperature  66‑pin TSSOP (TG) package with longer‑lead TSOP option for improved reliability; commercial ambient operating range 0°C to +70°C.

Typical Applications

• Parallel DDR memory subsystems  Use as a 512 Mbit parallel DDR SDRAM device where 64M × 8 organization and source‑synchronous DQS are required.
• Compact board‑level memory  Fits designs that need high‑density DDR in a 66‑TSSOP footprint with 2.5 V I/O compatibility.
• Commercial embedded systems  Suitable for commercial ambient designs operating between 0°C and 70°C that require DDR performance at up to 167 MHz.

Unique Advantages

• DDR double‑data‑rate throughput: Enables two data transfers per clock cycle through an internal pipelined DDR architecture and DQS timing support.
• Flexible timing options: Speed grade 6T supports 133/167 MHz operation with defined data‑out and access windows to match system timing requirements.
• Byte‑wise data control: Data mask (DM) and DQS features allow controlled writes and source‑synchronous read capture for reliable high‑speed transfers.
• Compact, reliable package: 66‑TSSOP (0.400", 10.16 mm) provides a smaller board footprint with a longer‑lead TSOP option for improved reliability as noted in the datasheet.
• Standard commercial rating: Specified for 0°C to +70°C ambient temperature and VDD/VDDQ in the 2.3 V–2.7 V range for commercial system compatibility.

Why Choose IC DRAM 512MBIT PAR 66TSOP?

The MT46V64M8TG-6T L:F TR offers a compact, commercial‑grade DDR SDRAM solution delivering 512 Mbit density in a 66‑TSSOP package with support for source‑synchronous DQS, differential clocking and an internal DLL for aligned data transfers. Its 64M × 8 organization, 4 internal banks and programmable burst lengths provide flexibility for parallel DDR memory architectures.

This Micron DDR device is well suited for designs that require a reliable 2.5 V I/O parallel DDR memory component operating up to 167 MHz and within a 0°C to 70°C ambient range, providing a focused mix of performance and package density for board‑level memory implementations.

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