MT46V64M8TG-75E:D TR

The MT46V64M8TG-75E:D TR is a 512 Mbit parallel DRAM device implemented as SDRAM - DDR with a 64M × 8 organization. It provides a parallel memory interface operating at a 133 MHz clock frequency, intended for use where standard DDR parallel DRAM is required.

Key electrical and mechanical characteristics include a supply voltage range of 2.3 V to 2.7 V, an access time of 750 ps, a write cycle time (word page) of 15 ns, and a 66-TSSOP package (10.16 mm width). The device is specified for an ambient operating temperature range of 0°C to 70°C.

Key Features

• Memory Core & Architecture 512 Mbit DRAM organized as 64M × 8 using SDRAM - DDR architecture for parallel memory applications.
• Performance Operates with a 133 MHz clock frequency, 750 ps access time, and a 15 ns write cycle time (word page).
• Power Supply voltage range of 2.3 V to 2.7 V, supporting system designs targeting that DDR voltage window.
• Package & Mounting 66-TSSOP (0.400", 10.16 mm width) supplier device package suitable for surface-mount PCB assembly.
• Environmental Range Rated for ambient operation from 0°C to 70°C (TA).
• Interface & Format Parallel memory interface in a DRAM format, mounting type specified as volatile memory.

Typical Applications

• Embedded memory subsystems — Acts as parallel DDR SDRAM for systems needing a 64M × 8 memory organization.
• Buffer and frame storage — Useful where 512 Mbit of volatile storage and parallel access are required.
• Legacy parallel DDR designs — Fits designs that use a 66-TSSOP footprint and operate within the 2.3 V–2.7 V supply range.

Unique Advantages

• Standard DDR SDRAM architecture: Provides a familiar 64M × 8 SDRAM - DDR organization for integration into parallel memory systems.
• Defined timing characteristics: 133 MHz clock, 750 ps access time, and 15 ns write cycle time enable predictable memory timing in system designs.
• Compact surface-mount package: 66-TSSOP (10.16 mm width) supports space-constrained PCB layouts while maintaining parallel DRAM connectivity.
• Controlled supply range: 2.3 V to 2.7 V operation aligns with standard DDR voltage requirements for compatible system power rails.
• Rated commercial temperature: 0°C to 70°C ambient rating for general-purpose electronic equipment operating in typical commercial environments.

Why Choose MT46V64M8TG-75E:D TR?

The MT46V64M8TG-75E:D TR positions itself as a straightforward 512 Mbit parallel DDR SDRAM option offering defined timing and electrical characteristics suitable for systems designed around a 64M × 8 memory organization. Its 66-TSSOP package and 2.3 V–2.7 V supply make it compatible with designs that require a compact, surface-mount parallel DRAM device with commercial temperature range operation.

This device is appropriate for engineers and procurement teams specifying parallel DDR memory for embedded systems, buffering, or legacy parallel-memory designs where the listed timing, package, and voltage characteristics meet system requirements.

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