MT46V8M16P-5B:D TR

The MT46V8M16P-5B:D TR is a 128 Mbit DDR SDRAM device organized as 8M × 16 with four internal banks and a parallel memory interface. It implements a double-data-rate architecture with source-synchronous DQS, differential clock inputs, and an internal DLL for aligned data capture.

This device is intended for board-level memory applications that require compact 66‑TSSOP packaging, 2.5 V I/O signaling, and commercial temperature operation. Key value comes from DDR throughput, programmable burst lengths, and refresh/self‑refresh modes for typical volatile-memory system requirements.

Key Features

• Core / Architecture  Double Data Rate (DDR) SDRAM with an internal, pipelined DDR architecture providing two data accesses per clock cycle and an internal DLL to align DQ/DQS transitions with CK.
• Memory Organization  128 Mbit total capacity configured as 8M × 16 with four internal banks for concurrent operation.
• Performance / Timing  Rated clock frequency up to 200 MHz with an access time of 700 ps and a typical write-cycle time (word page) of 15 ns; speed grade -5B timing parameters supported.
• Interface / Data Integrity  Parallel memory interface with differential clock inputs (CK/CK#), bidirectional data strobe (DQS) transmitted/received with data (x16 devices include two DQS lines, one per byte), and data mask (DM) support.
• Power  VDD / VDDQ supply range of 2.5 V to 2.7 V with SSTL_2 compatible 2.5 V I/O signaling (VDD = +2.5V ±0.2V per datasheet options).
• Memory Control & Modes  Programmable burst lengths (2, 4, or 8), auto refresh and self refresh modes to support standard volatile-memory refresh requirements.
• Package & Temperature  66‑pin TSSOP (0.400" / 10.16 mm width) package and commercial operating temperature range of 0°C to 70°C.

Typical Applications

• Board-level system memory  Use as on-board parallel DDR memory where 128 Mbit density and x16 organization are required.
• Embedded systems  Compact 66‑TSSOP package and 2.5 V I/O make it suitable for space-constrained embedded designs needing DDR throughput.
• FPGA and ASIC memory interfaces  Parallel DDR interface with DQS and differential clock inputs for synchronized data capture in logic‑based designs.

Unique Advantages

• Double-data-rate transfers: Two data accesses per clock cycle increase effective bandwidth compared with single‑data‑rate alternatives.
• Source‑synchronous DQS: DQS transmitted/received with data and an internal DLL improve timing margin for reliable read/write capture.
• Flexible burst control: Programmable burst lengths (2/4/8) let designers optimize transfers for system memory patterns and bus efficiency.
• SSTL_2 compatible 2.5 V I/O: Standard 2.5 V signaling supports common board-level memory interfaces and simplifies voltage-domain planning.
• Compact, reliable package: 66‑TSSOP (0.400" / 10.16 mm) package provides a small footprint with longer lead TSOP option noted for improved reliability.
• Standard commercial temperature range: 0°C to 70°C rating suitable for many consumer and industrial electronics applications.

Why Choose MT46V8M16P-5B:D TR?

The MT46V8M16P-5B:D TR combines a proven DDR SDRAM architecture with 128 Mbit density, x16 organization, and parallel interface features that support synchronized, high-rate memory transfers. Its combination of source‑synchronous DQS, differential clock inputs, and programmable burst lengths offers designers deterministic timing behavior in compact 66‑TSSOP packaging.

This device is suited for designs that require a commercial‑temperature, board‑level DDR memory solution with 2.5 V I/O signaling and refresh/self‑refresh capability. It provides a clear specification set for engineering evaluation and system integration where a parallel DDR memory of this capacity and form factor is required.

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