MT46V64M8TG-75Z:D TR

The MT46V64M8TG-75Z:D TR is a 512 Mbit volatile DRAM device implemented as SDRAM - DDR with a parallel memory interface. It is organized as 64M × 8 and specified for operation at a 133 MHz clock frequency with an access time of 750 ps.

Offered in a 66-TSSOP (0.400", 10.16 mm width) package and supporting a 2.3 V to 2.7 V supply range, this device targets systems requiring a compact parallel DDR memory component with defined timing characteristics.

Key Features

• Memory Type & Technology Volatile memory implemented as SDRAM - DDR, providing parallel DRAM operation in a 64M × 8 organization for a total of 512 Mbit.
• Performance & Timing Clock frequency specified at 133 MHz with an access time of 750 ps and a write cycle time (word page) of 15 ns.
• Voltage & Power Operates from a 2.3 V to 2.7 V supply range.
• Package Supplied in a 66-TSSOP (0.400", 10.16 mm width) package (66-TSOP) suitable for surface-mount applications.
• Operating Conditions Rated for an ambient operating temperature range of 0°C to 70°C (TA).
• Interface Parallel memory interface designed for direct integration into parallel DRAM subsystems.

Typical Applications

• Embedded Systems — Use where a 512 Mbit parallel DDR SDRAM device with defined timing and a compact 66-TSSOP package is required.
• Memory Subsystems — Fits designs needing a 64M × 8 parallel DRAM organization operating at 133 MHz clock rates.
• Consumer Electronics — Applicable to consumer-grade products operating within a 0°C to 70°C ambient range that require parallel DRAM memory.

Unique Advantages

• 512 Mbit capacity: Provides a 64M × 8 memory organization for applications needing half-gigabit DRAM density.
• DDR SDRAM technology: SDRAM - DDR architecture with a 133 MHz clock frequency and 750 ps access time for predictable timing behavior.
• Compact package: 66-TSSOP (0.400", 10.16 mm width) package optimizes board space while supporting surface-mount assembly.
• Defined voltage range: Operates from 2.3 V to 2.7 V, enabling designs targeted to that supply domain.
• Specified operating temperature: Rated for 0°C to 70°C ambient operation, aligning with standard commercial-temperature designs.

Why Choose IC DRAM 512MBIT PARALLEL 66TSOP?

The MT46V64M8TG-75Z:D TR positions itself as a straightforward parallel DDR SDRAM option offering 512 Mbit density in a 64M × 8 organization. Its defined electrical and timing specifications—133 MHz clock, 750 ps access time, 15 ns write cycle time, and 2.3 V–2.7 V supply—make it appropriate for designs that require explicit timing and voltage characteristics in a compact 66-TSSOP package.

This device is suited to engineers and procurement teams specifying a fixed-density parallel DRAM component for commercial-temperature applications where package footprint, supply range, and measured timing parameters are key selection criteria.

If you need pricing, lead-time or volume-quote information for the MT46V64M8TG-75Z:D TR, request a quote or contact sales to discuss availability and ordering options.