MT46V8M16P-6T:D TR

The MT46V8M16P-6T:D TR is a 128 Mbit DDR SDRAM device organized as 8M × 16 with a parallel memory interface. It implements a double-data-rate architecture with internal DLL and source-synchronous DQS for synchronized data transfers.

Designed for systems requiring a 16-bit parallel DDR memory element, the device offers defined timing grades, a 66‑pin TSOP package, and operation within a commercial temperature range for integration into a variety of electronic designs.

Key Features

• Core architecture Internal, pipelined DDR architecture providing two data accesses per clock cycle and an internal DLL to align DQ/DQS transitions with CK.
• Memory organization 128 Mbit capacity organized as 8M × 16 with four internal banks (2 Meg × 16 × 4 banks).
• Data strobes and masking Bidirectional data strobe (DQS) transmitted/received with data for source‑synchronous capture; two DQS and two data mask (DM) signals for the x16 configuration (one per byte).
• Performance / Timing Specified for clock operation up to 167 MHz (speed grade -6T) with timing options including programmable burst lengths (2, 4, 8) and cycle times down to the 6 ns class (DDR333 timing indicated).
• Voltage Supply range indicated as 2.3 V to 2.7 V; datasheet cites VDD/VDDQ options including +2.5 V ±0.2 V and +2.6 V ±0.1 V for DDR400 variants.
• Package and mounting 66‑pin TSSOP (66‑TSOP, 0.400" / 10.16 mm width) plastic TSOP package with longer lead option (OCPL) for improved reliability; surface-mount mounting.
• Refresh and power modes Supports auto refresh and self refresh modes with options for standard or low‑power self refresh.
• Temperature rating Commercial operating temperature range: 0°C to 70°C (TA).

Typical Applications

• Parallel DDR memory subsystems — Used where a 128 Mbit, 16‑bit parallel DDR SDRAM element is required for main or auxiliary memory.
• Embedded systems — Integrates into designs needing a compact TSOP packaged DDR device with defined timing grades and refresh support.
• Consumer and industrial electronics — Suitable for commercial‑temperature designs that require DDR SDRAM with programmable burst lengths and auto/self‑refresh capabilities.

Unique Advantages

• Source‑synchronous data capture: DQS transmitted/received with data simplifies timing alignment and supports reliable high‑speed transfers.
• Flexible timing options: Multiple speed grades and programmable burst lengths (2, 4, 8) allow selection of performance profiles to match system timing requirements.
• 16‑bit parallel organization: 8M × 16 arrangement provides a wide data path suitable for designs that require x16 DDR memory.
• Compact, long‑lead TSOP package: 66‑TSSOP packaging with OCPL option enables a small board footprint while providing lead geometry for improved assembly reliability.
• Robust refresh modes: Auto refresh and self refresh support simplify memory maintenance and low‑power operation management.

Why Choose MT46V8M16P-6T:D TR?

The MT46V8M16P-6T:D TR positions itself as a commercially rated 128 Mbit DDR SDRAM device offering a 16‑bit parallel interface, source‑synchronous DQS, and selectable timing grades for systems that require deterministic DDR behavior. Its combination of defined voltage range, refresh modes, and TSOP packaging makes it suitable for designs that demand a compact, documented DDR memory component from Micron Technology Inc.

Engineers specifying this device benefit from precise memory organization (8M × 16), multiple timing and package options, and datasheet‑level detail for system integration and validation in commercial temperature environments.

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