MT46V8M16P-75:D TR

The MT46V8M16P-75:D TR is a 128 Mbit DDR SDRAM device organized as 8M × 16 with a 4-bank internal architecture and a parallel memory interface. It implements double-data-rate (DDR) operation with source-synchronous data capture and a DLL to align data with the clock.

This device is intended for designs requiring compact, board-level DDR memory in a 66‑TSSOP (0.400", 10.16 mm width) package and supports standard DDR features such as programmable burst lengths, auto-refresh/self-refresh, and SSTL_2-compatible I/O levels.

Key Features

• DDR Architecture Internal pipelined double-data-rate operation provides two data accesses per clock cycle with differential clock inputs (CK/CK#).
• Memory Organization 128 Mbit capacity organized as 8M × 16 with four internal banks (2M × 16 × 4 banks).
• Data Path and Strobes Bidirectional data strobe (DQS) transmitted/received with data for source-synchronous capture; x16 devices include two DQS signals (one per byte) and data mask (DM) lines.
• Voltage and I/O VDD operating range of 2.3 V to 2.7 V with 2.5 V I/O levels; SSTL_2 compatible I/O signaling is supported.
• Performance and Timing Clock frequency listed at 133 MHz with an access time of 750 ps and a write cycle time (word page) of 15 ns.
• Programmable Burst and Refresh Programmable burst lengths of 2, 4, or 8; supports auto-refresh and self-refresh modes and concurrent auto precharge options.
• Clock and DLL Differential clock inputs with a DLL to align DQ/DQS transitions to CK; commands entered on positive CK edges.
• Package and Temperature 66‑TSSOP (0.400", 10.16 mm width) package with commercial operating temperature 0°C to 70°C (TA).
• Additional Reliability Options Longer lead TSOP option for improved reliability (OCPL) and support for standard and low-power self-refresh options in available configurations.

Typical Applications

• Board-level DDR memory — Provides 128 Mbit parallel DDR SDRAM capacity in designs requiring a 66‑TSSOP footprint and standard DDR signaling.
• Buffered data storage — 4-bank architecture and programmable burst lengths enable burst-oriented read/write buffering and short burst transfers.
• Systems with SSTL_2 I/O — 2.5 V I/O signaling compatibility fits applications using SSTL_2 voltage levels and differential clocking.

Unique Advantages

• Compact 66‑TSSOP footprint: Enables higher memory density on space-constrained PCBs while keeping standard DDR signaling.
• Source‑synchronous DQS support: Bidirectional DQS and DLL alignment improve data capture timing for read and write operations.
• Flexible burst operation: Programmable burst lengths (2/4/8) allow tuning for burst-oriented transfers and system throughput needs.
• Wide supply tolerance: Operates across a 2.3 V–2.7 V VDD range, matching common DDR supply rails and tolerance bands listed in the datasheet.
• Commercial temperature rating: Specified for 0°C to 70°C operation for standard commercial applications.
• Built‑in refresh and power modes: Auto-refresh and self-refresh modes (including low-power options in available configurations) simplify memory retention management.

Why Choose MT46V8M16P-75:D TR?

The MT46V8M16P-75:D TR delivers a compact, standards-based DDR SDRAM solution in a 66‑TSSOP package with 128 Mbit capacity and a 4-bank architecture. Its DDR source-synchronous design, DLL alignment, and SSTL_2-compatible I/O are suited to systems that require predictable DDR timing and board-level memory integration.

This device is appropriate for designs that need parallel DDR memory with programmable burst options, refresh control, and commercial temperature operation, offering a balance of density, timing features, and a small package footprint for board-level implementations.

Request a quote or submit a pricing and availability inquiry to get detailed lead-time and volume pricing information for the MT46V8M16P-75:D TR.