MT46V8M16TG-75:D

The MT46V8M16TG-75:D is a 128 Mbit DDR SDRAM organized as 8M × 16 with a parallel interface and delivered in a 66‑TSSOP package. It implements a pipelined double-data-rate architecture with internal features for burst transfers, refresh control and source-synchronous data capture.

Designed for designs that require volatile DDR memory in a compact TSOP package, the device provides a 133 MHz clock rating, a 2.3–2.7 V supply range, and a commercial operating temperature range of 0 °C to 70 °C.

Key Features

• Core / Architecture  Internal pipelined double-data-rate (DDR) architecture enabling two data accesses per clock cycle and four internal banks for concurrent operation.
• Memory Organization  128 Mbit capacity organized as 8M × 16 with support for x16 data width and data mask (two DM pins for x16).
• Performance / Timing  Clock frequency rated at 133 MHz (speed grade -75), access time ~750 ps and write cycle time (word/page) of 15 ns; programmable burst lengths of 2, 4, or 8.
• Interface / Signaling  Parallel DDR interface with differential clock inputs (CK and CK#) and bidirectional data strobe (DQS) for source‑synchronous data capture; DQS edge alignment behavior included.
• Power  Operating supply range VDD/VDDQ from 2.3 V to 2.7 V (with device datasheet specifying VDD = 2.5 V ± tolerance options); 2.5 V I/O and SSTL_2 compatibility noted in the device specification.
• Refresh & Power Management  Supports auto refresh and self refresh modes, including standard and low‑power self refresh options listed in the device options.
• Package & Temperature  66‑pin TSSOP (0.400", 10.16 mm width) package; commercial temperature rating 0 °C to 70 °C.
• System Timing & Reliability  On‑die DLL to align DQ/DQS with CK, concurrent auto precharge option, and timing specs for CAS latency and DQS‑DQ skew across speed grades.

Typical Applications

• Board-level DDR memory  Provides 128 Mbit x16 parallel DDR SDRAM in a 66‑TSSOP package for board designs that require compact, mounted volatile memory.
• Embedded system memory  Suitable where a commercial‑temperature DDR memory device with programmable burst lengths and auto/self refresh is required.
• Legacy or module upgrade designs  Fits applications that specify a 66‑TSSOP x16 DDR component with 2.5 V I/O signaling and a 133 MHz clock rating.

Unique Advantages

• Double-data-rate throughput: Internal DDR architecture delivers two data transfers per clock cycle for increased bandwidth at a given clock rate.
• Source-synchronous capture: Bidirectional DQS and DLL alignment improve read/write timing alignment and system timing margin.
• Flexible burst and refresh control: Programmable burst lengths plus auto and self refresh modes simplify memory sequence management.
• Compact TSOP package: 66‑TSSOP (0.400", 10.16 mm) package allows integration into space-constrained PCBs while maintaining x16 data width.
• Standard DDR signaling levels: 2.3–2.7 V supply range with 2.5 V I/O compatibility supports common SSTL_2 signaling environments.
• Commercial temperature rating: Rated for 0 °C to 70 °C for applications targeting commercial operating environments.

Why Choose IC DRAM 128MBIT PAR 66TSOP?

The MT46V8M16TG-75:D offers a compact, standards-based DDR SDRAM option from Micron with a clear set of timing, interface and package specifications. Its internal DDR pipeline, DQS signaling and DLL provide timing features required for predictable source‑synchronous operation, while programmable burst lengths and refresh modes offer flexibility for system memory management.

This device is well suited to designs that require a 128 Mbit x16 parallel DDR memory in a 66‑pin TSSOP footprint, operating at a 133 MHz clock rate and within a commercial temperature range. The combination of device-level timing controls and industry-standard signaling makes it suitable for board-level memory implementations where these exact specs are required.

Request a quote or submit an RFQ to check pricing and availability for the MT46V8M16TG-75:D and to confirm lead times for your project requirements.