MT47H128M4B6-25E:D TR

The MT47H128M4B6-25E:D TR is a 512 Mbit DDR2 SDRAM configured as 128M x 4, supplied in a 60-ball FBGA package. It implements DDR2 SDRAM architecture with a parallel memory interface and is specified for commercial-temperature operation (0°C to 85°C).

Designed for systems that require pocketed DDR2 memory capacity with a low-voltage 1.7–1.9 V supply range and 400 MHz clock operation, this device targets designs where compact FBGA packaging and standard DDR2 signalling are required.

Key Features

• Core & Memory Organization 512 Mbit density arranged as 128M x 4 with 4 internal banks to support concurrent operations.
• DDR2 SDRAM Architecture DDR2 SDRAM technology with 4n-bit prefetch and programmable CAS latency and additive latency options.
• Performance & Timing Rated for 400 MHz clock frequency with 400 ps access time and timing options consistent with DDR2 speed grades (examples include -25E, -25).
• Voltage & I/O Low-voltage operation with VDD/VDDQ specified between 1.7 V and 1.9 V and JEDEC-standard 1.8 V I/O compatibility noted in the datasheet.
• Data Integrity & Interface Supports differential data strobe (DQS/DQS#) options and a DLL for aligning DQ and DQS transitions with clock signals.
• Burst & Drive Options Selectable burst lengths (4 or 8), adjustable data-output drive strength and optional duplicate output strobe (RDQS for x8).
• Power Management On-die termination (ODT) and support for standard and low-power self-refresh options as described in the datasheet.
• Package & Temperature Supplied in a 60-FBGA package and specified for commercial temperature range (0°C to 85°C, TC).
• Standards & Compliance Datasheet indicates RoHS compliance and JEDEC-standard 1.8 V I/O signalling compatibility.

Typical Applications

• Legacy DDR2 platforms — Memory replacement or expansion in systems designed around DDR2 parallel interfaces where 512 Mbit density is required.
• Embedded systems (commercial) — Compact FBGA package and 1.7–1.9 V operation for commercial-temperature embedded applications needing DDR2 memory.
• Consumer electronics — Use in consumer devices that integrate DDR2 SDRAM with programmable latency and selectable burst modes for data throughput tuning.

Unique Advantages

• Standard DDR2 architecture: Enables straightforward integration with DDR2-compatible controllers using familiar timing parameters and CAS latency settings.
• Flexible timing and burst control: Programmable CAS latency and selectable burst lengths (4 or 8) allow tuning for system-level performance and latency trade-offs.
• Low-voltage operation: 1.7 V–1.9 V supply range supports low-voltage system designs and JEDEC 1.8 V I/O signalling compatibility reduces power envelope at system level.
• Compact FBGA package: 60-ball FBGA footprint minimizes PCB area while providing the necessary ballout for a parallel DDR2 interface.
• On-die termination and drive control: ODT and adjustable data-output drive strength simplify board-level signal integrity tuning without adding external components.

Why Choose MT47H128M4B6-25E:D TR?

The MT47H128M4B6-25E:D TR is positioned for designs that require a standard DDR2 SDRAM device offering 512 Mbit density, low-voltage operation, and a compact 60-FBGA package. Its feature set—programmable latency, selectable burst lengths, on-die termination, and differential DQS options—provides the control needed to tune performance and signal integrity in DDR2-based systems.

This device is suited to commercial-temperature applications where designers need a verified DDR2 memory building block with clear supply and timing specifications (1.7–1.9 V, 400 MHz clock frequency, 400 ps access time) and the packaging density advantages of an FBGA form factor.

If you require pricing or availability for the MT47H128M4B6-25E:D TR, request a quote or submit a pricing inquiry and our team will respond with current lead times and ordering options.