MT46V8M16TG-6T:D TR

The MT46V8M16TG-6T:D TR is a 128 Mbit parallel DDR SDRAM device in a 66‑TSSOP package, organized as 8M × 16 with four internal banks. It implements an internal pipelined double‑data‑rate architecture with source‑synchronous data capture and is intended for systems that require parallel DDR memory with 2.5 V I/O signaling.

This device is suitable for designs that need a compact 66‑pin TSOP form factor, 2.3–2.7 V supply operation, and commercial temperature operation (0 °C to 70 °C), delivering predictable timing and refresh features for DDR memory subsystems.

Key Features

• Core Architecture Internal pipelined double‑data‑rate (DDR) architecture providing two data accesses per clock cycle and a DLL to align DQ/DQS transitions with CK.
• Memory Organization 128 Mbit / organized as 8M × 16 with four internal banks (MT46V8M16 configuration).
• Data Strobe and Mask Bidirectional data strobe (DQS) transmitted/received with data for source‑synchronous capture; x16 device includes two DQS signals and two data mask (DM) functions (one per byte).
• Timing and Performance Clock frequency listed at 167 MHz (speed grade -6T), access window 700 ps, and write cycle time (word page) of 15 ns.
• Programmable Burst and Refresh Programmable burst lengths of 2, 4, or 8, with auto refresh and self refresh modes supported.
• Voltage and I/O VDD/VDDQ operating range 2.3 V to 2.7 V (documented VDD = +2.5 V ±0.2 V); 2.5 V I/O (SSTL_2 compatible).
• Interface Parallel DDR interface with differential clock inputs (CK/CK#) and commands entered on CK positive edges.
• Package and Temperature 66‑TSSOP (0.400", 10.16 mm width) package; commercial temperature rating 0 °C to 70 °C (TA).

Typical Applications

• Parallel DDR memory subsystems — Use where a 128 Mbit parallel DDR SDRAM is required for system memory or buffering.
• Compact board designs — 66‑TSSOP package supports designs needing higher density memory in a small footprint.
• 2.5 V I/O systems — Suited for systems specifying 2.5 V SSTL_2 compatible signaling and parallel DDR interfaces.

Unique Advantages

• DDR pipelined architecture: Provides two data accesses per clock cycle for consistent DDR operation and predictable timing behavior.
• Byte‑level strobes and masking: Dual DQS and DM on the x16 device enable per‑byte data capture and write masking for finer control during transfers.
• Programmable bursts and refresh modes: Burst lengths of 2/4/8 and support for auto/self refresh simplify memory management and refresh scheduling.
• Industry‑standard signaling: 2.5 V I/O (SSTL_2 compatible) and differential CK/CK# inputs support standard DDR interface timing and signaling.
• Compact TSOP packaging: 66‑pin TSSOP (10.16 mm width) offers a smaller footprint while maintaining lead length options for reliability.
• Documented timing grades: Speed grade -6T provides operation at 167 MHz with specified access and data windows for system timing design.

Why Choose IC DRAM 128MBIT PAR 66TSOP?

The MT46V8M16TG-6T:D TR (IC DRAM 128MBIT PAR 66TSOP) combines a 128 Mbit x16 organization with a pipelined DDR architecture and industry‑standard 2.5 V I/O, offering a compact memory option for designs requiring parallel DDR operation in a 66‑TSSOP package. Its documented timing parameters, programmable burst lengths, and built‑in refresh modes make it suitable for predictable memory subsystem integration.

This Micron DDR device is appropriate for designers and procurement teams specifying a commercial‑temperature parallel DDR component with 2.3–2.7 V supply operation and compact TSOP packaging. Detailed device timing and behavioral documentation are available to support system integration and validation.

If you need pricing, lead time, or a formal quote for MT46V8M16TG-6T:D TR, request a quote or contact sales to discuss availability and ordering details.