MT46V8M16TG-75:D TR

The MT46V8M16TG-75:D TR is a 128 Mbit DDR SDRAM device from Micron Technology Inc., organized as 8M × 16 with a parallel memory interface. It implements a double-data-rate architecture with internal DLL and source-synchronous data capture to deliver two data accesses per clock cycle.

This device is intended for systems requiring a compact 66‑TSSOP package and commercial temperature operation (0°C to 70°C), providing 2.3 V–2.7 V supply operation, programmable burst lengths, and standard DDR features such as auto-refresh and self-refresh modes.

Key Features

• Core Architecture  Internal, pipelined DDR architecture supporting two data transfers per clock cycle and a DLL to align DQ/DQS with CK.
• Memory Organization  128 Mbit organized as 8M × 16 with four internal banks for concurrent operation.
• Interface and Timing  Parallel DDR interface with differential clock inputs (CK/CK#), bidirectional data strobe (DQS) and programmable burst lengths of 2, 4, or 8. Specified clock frequency 133 MHz and access time 750 ps.
• Data Integrity and Write Control  Data mask (DM) support (x16 device has two masks, one per byte) and DQS timing: edge-aligned for READs and center-aligned for WRITEs.
• Power and Voltage  Supply range 2.3 V to 2.7 V (VDD/VDDQ options in datasheet include 2.5 V ± tolerances) with 2.5 V I/O (SSTL_2 compatible).
• Refresh and Power Modes  Supports auto-refresh and self-refresh modes, including standard and low-power self-refresh options documented in the datasheet.
• Package and Temperature  66‑TSSOP (0.400", 10.16 mm width) plastic package with commercial temperature rating (0°C to 70°C).
• Write Cycle Performance  Word-page write cycle time of 15 ns for transactional timing reference.

Typical Applications

• System Memory for Parallel DDR Interfaces  Provides 128 Mbit of DDR SDRAM for systems that require parallel DDR memory in a 66‑TSSOP footprint.
• Embedded and Consumer Electronics  Suited to commercial-temperature embedded designs needing DDR performance at 133 MHz clock rate and compact packaging.
• Buffering and Temporary Storage  Useful where short-term, volatile storage with programmable burst lengths and auto-refresh is required.

Unique Advantages

• DDR Source-Synchronous Capture: Bidirectional DQS and DLL alignment enable reliable data capture at double-data-rate timing.
• Compact, Serviceable Package: 66‑TSSOP package provides a small footprint while offering a longer lead option (OCPL) noted in the datasheet for improved reliability.
• Flexible Timing Options: Programmable burst lengths and multiple speed-grade options in the datasheet allow tailoring to system timing requirements.
• Standard Voltage and I/O Compatibility: 2.3 V–2.7 V supply range with 2.5 V SSTL_2 compatible I/O simplifies integration with common DDR signaling domains.
• Power Management Modes: Auto-refresh and self-refresh support reduce refresh management overhead in system designs.

Why Choose IC DRAM 128MBIT PAR 66TSOP?

The MT46V8M16TG-75:D TR delivers a proven DDR SDRAM feature set—source-synchronous DQS, DLL alignment, four internal banks, and programmable burst lengths—in a compact 66‑TSSOP package from Micron. Its 8M × 16 organization, 133 MHz clock rating, and 2.3 V–2.7 V supply make it suitable for commercial-temperature systems that require a parallel DDR memory solution with standard DDR control and refresh capabilities.

This device is appropriate for designers who need a verified DDR memory building block with clear timing and power specifications, documented speed-grade options, and standard power/I/O compatibility for ease of integration and predictable system behavior.

If you need pricing, lead time, or to request a formal quote for the MT46V8M16TG-75:D TR, submit a request for a quote or RFQ to receive detailed availability and ordering information.