MT47H128M4CB-3:B

The MT47H128M4CB-3:B is a 512 Mbit DDR2 SDRAM organized as 128M x 4 with a parallel memory interface in a 60-ball FBGA package. It operates from a 1.7 V to 1.9 V supply and supports DDR2 signaling and timing features defined in the product datasheet.

This device provides a commercial operating temperature range of 0°C to 85°C and supports standard DDR2 capabilities such as programmable CAS latency, selectable burst lengths, and on-die termination for system-level signal integrity control.

Key Features

• Memory Architecture  512 Mbit DDR2 SDRAM organized as 128M × 4 with 4 internal banks for concurrent operation and a 4n-bit prefetch architecture.
• Performance & Timing  Clock frequency up to 333 MHz with an access time of 450 ps and a write cycle time (word page) of 15 ns. Programmable CAS latency and posted CAS additive latency are supported.
• Power  Operates from Vdd = 1.8 V ±0.1 V (specified supply range 1.7 V–1.9 V) with JEDEC-standard 1.8 V I/O (SSTL_18-compatible) and separate VddQ support.
• Interface & Signal Integrity  Parallel DDR2 interface with optional differential data strobe (DQS/DQS#) and DLL to align DQ/DQS transitions with CK. On-die termination (ODT) is supported.
• Data Transfer Options  Selectable burst lengths of 4 or 8 and support for duplicate output strobe (RDQS) option per device configuration notes.
• Refresh & Reliability  8,192-cycle (64 ms) refresh and internal bank architecture designed to support standard DDR2 operation.
• Package & Temperature  Supplied in a 60-ball FBGA package; commercial temperature rating 0°C to 85°C (TC) per product specifications.
• Compliance  Device documentation indicates RoHS compliance and adherence to JEDEC clock jitter specifications.

Unique Advantages

• Compact FBGA footprint: The 60-ball FBGA package enables high-density board integration while maintaining DDR2 interface accessibility.
• Low-voltage DDR2 operation: 1.7 V–1.9 V supply supports systems designed for 1.8 V DDR2 signaling and lower power rails.
• Flexible timing control: Programmable CAS latency and selectable burst lengths allow tuning for system-level memory timing requirements.
• Signal integrity features: On-die termination and DLL support improve data-eye alignment and reduce external termination complexity.
• Banked architecture for concurrency: Four internal banks enable interleaved accesses to improve effective throughput for parallel memory operations.

Why Choose IC DRAM 512MBIT PARALLEL 60FBGA?

The MT47H128M4CB-3:B positions itself as a straightforward DDR2 SDRAM option when a 512 Mbit, 128M × 4 organization is required in a 60-ball FBGA package. Its DDR2 feature set—programmable latency, selectable burst lengths, on-die termination, and DLL—provides the control and signal integrity features engineers expect for system-level memory design.

This device is suited to designs that require standard DDR2 signaling at commercial temperature ranges and a low-voltage 1.8 V memory interface, offering configuration flexibility and established JEDEC-compatible features documented in the product datasheet.

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