MT47H128M4CF-25E:G

The MT47H128M4CF-25E:G is a 512 Mbit DDR2 SDRAM organized as 128M × 4 with a parallel memory interface in a 60-ball TFBGA (8 × 10 mm) package. It is a volatile, JEDEC-compatible DDR2 device designed for systems requiring compact, low-voltage synchronous DRAM.

Key architectural elements include a 4n‑bit prefetch, four internal banks and programmable CAS latency; the device targets applications that need configurable DDR2 bandwidth and compact board-level integration while operating from a 1.7 V to 1.9 V supply over a commercial temperature range.

Key Features

• Memory Core  512 Mbit DDR2 SDRAM organized as 128M × 4 with four internal banks for concurrent operation.
• DDR2 Architecture  4n‑bit prefetch architecture, DLL to align DQ and DQS with CK, and programmable CAS latency with posted CAS additive latency options.
• Timing Options  Supports JEDEC timing grades; the part number variant includes the -25E timing option (2.5 ns @ CL = 5, DDR2‑800) and the datasheet lists multiple speed/timing grades for selection.
• Interface and Signaling  JEDEC‑standard 1.8 V I/O (SSTL_18‑compatible) with differential data strobe (DQS/DQS#) options and optional duplicate output strobe (RDQS) for x8 configurations.
• Power and Voltage  Single‑supply operation with specified VDD range of 1.7 V to 1.9 V (datasheet nominal VDD = 1.8 V ± 0.1 V) and adjustable data‑output drive strength.
• Data Integrity and Performance  On‑die termination (ODT) option and DLL support for improved signal timing and integrity; selectable burst lengths of 4 or 8 to match transfer patterns.
• Refresh and Reliability  8192‑cycle refresh with a 64 ms refresh interval as specified in the datasheet.
• Package and Temperature  60‑ball TFBGA (8 mm × 10 mm) package; commercial operating temperature range 0°C to 85°C.
• Standards and Compliance  JEDEC DDR2 architecture with RoHS‑compliant designation indicated in the datasheet.

Unique Advantages

• High memory density in a compact package: 512 Mbit capacity in a 60‑ball FBGA (8 × 10 mm) for space‑constrained designs.
• Flexible performance tuning: Programmable CAS latency, posted CAS additive latency and selectable burst lengths allow designers to match timing to system requirements.
• Low‑voltage operation: VDD range of 1.7 V–1.9 V and SSTL_18‑compatible I/O reduce system power and simplify interface design with 1.8 V signaling.
• Improved signal integrity: On‑die termination (ODT) and a DLL to align DQ/DQS transitions with CK help maintain reliable high‑speed transfers.
• Concurrency and throughput: Four internal banks and 4n‑bit prefetch architecture enable overlapping operations for sustained data throughput.
• JEDEC DDR2 timing options: Multiple speed/timing grades (including the -25E option) provide choices for performance/cost tradeoffs.

Why Choose IC DRAM 512MBIT PARALLEL 60FBGA?

The MT47H128M4CF-25E:G positions itself as a configurable DDR2 memory building block for systems that require 512 Mbit density in a compact FBGA footprint. Its programmable timing, ODT, DLL and low‑voltage 1.8 V signaling allow designers to tailor memory behavior to platform timing and power targets while maintaining JEDEC DDR2 architecture.

This device is suitable for designs needing a parallel DDR2 SDRAM solution with commercial temperature support and a small board footprint; the combination of internal banks, selectable burst lengths and adjustable drive strength offers practical levers for balancing throughput, signal integrity and power.

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