MT47H16M16BG-3 IT:B TR

IC DRAM 256MBIT PARALLEL 84FBGA
Part Description

IC DRAM 256MBIT PARALLEL 84FBGA

Quantity 349 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerMicron Technology Inc.
Manufacturing StatusObsolete
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device Package84-FBGA (8x14)Memory FormatDRAMTechnologySDRAM - DDR2
Memory Size256 MbitAccess Time450 psGradeAutomotive
Clock Frequency333 MHzVoltage1.7V ~ 1.9VMemory TypeVolatile
Operating Temperature-40°C ~ 95°C (TC)Write Cycle Time Word Page15 nsPackaging84-FBGA
Mounting MethodVolatileMemory InterfaceParallelMemory Organization16M x 16
Moisture Sensitivity Level3 (168 Hours)RoHS ComplianceROHS CompliantREACH ComplianceREACH Unaffected
QualificationN/AECCN3A991B2AHTS Code8542.32.0024

Overview of MT47H16M16BG-3 IT:B TR – IC DRAM 256MBIT PARALLEL 84FBGA

The MT47H16M16BG-3 IT:B TR is a 256 Mbit DDR2 SDRAM organized as 16M × 16 with a parallel memory interface in an 84-ball FBGA (8 × 14) package. It implements DDR2 SDRAM architecture and is offered with industrial temperature capability for applications requiring extended operating temperature range.

This device targets systems requiring compact, low-voltage DDR2 memory with programmable timing and on-die signal integrity features. Key value comes from its DDR2 architecture, industrial temperature rating, and compact FBGA mounting.

Key Features

  • Memory Architecture  DDR2 SDRAM organized as 16M × 16 for a total of 256 Mbit; 4 internal banks for concurrent operation.
  • Performance  Clock frequency specified at 333 MHz with an access time of 450 ps and a word/page write cycle time of 15 ns.
  • Voltage and I/O  Operates from 1.7 V to 1.9 V; datasheet specifies VDD and VDDQ = +1.8 V ±0.1 V with JEDEC-standard 1.8 V I/O (SSTL_18-compatible).
  • Timing and Burst Control  Programmable CAS latency and selectable burst lengths (BL = 4 or 8) to tune latency and throughput per system requirements.
  • Signal Integrity  DLL to align DQ and DQS transitions with CK and on-die termination (ODT) to improve signal margins; supports JEDEC clock jitter specification.
  • Refresh and Reliability  64 ms, 8,192-cycle refresh and four internal banks to support sustained memory operation.
  • Package & Mounting  84-ball FBGA (8 mm × 14 mm) package, intended for surface-mount assembly in compact designs.
  • Temperature Range  Industrial temperature option with an operating temperature range of -40°C to 95°C (TC).
  • Additional Functional Options  Differential data strobe (DQS/DQS#) option, duplicate output strobe (RDQS) option for x8 devices, adjustable data-output drive strength.
  • Compliance  Datasheet lists RoHS compliance for offered device options.

Typical Applications

  • Industrial and Embedded Systems  Industrial temperature rating and compact FBGA packaging make the device suitable for embedded controllers and industrial electronics that require DDR2 memory in constrained board space.
  • Board-Level Memory Subsystems  Used as parallel DDR2 DRAM in memory subsystems where 256 Mbit density and x16 organization are required.
  • Compact Consumer or Communication Modules  Small FBGA footprint and low-voltage operation support integration into space-constrained consumer and communication modules that use DDR2 memory.

Unique Advantages

  • Industrial Temperature Capability: Designed for -40°C to 95°C (TC), enabling deployment in systems exposed to extended temperature ranges.
  • Low-Voltage DDR2 Operation: 1.7 V–1.9 V supply range (VDD and VDDQ = 1.8 V ±0.1 V) reduces power domain requirements in modern system designs.
  • Programmable Timing Flexibility: Programmable CAS latency and selectable burst lengths allow designers to balance latency and throughput per application needs.
  • Signal Integrity Features: DLL alignment and on-die termination improve data timing and reduce external termination complexity.
  • Compact FBGA Packaging: 84-ball FBGA (8 × 14 mm) provides high-density mounting for compact boards while maintaining x16 data width.
  • Standardized JEDEC Support: JEDEC-compatible I/O and clock jitter support simplifies integration with standard DDR2 controllers and memory subsystems.

Why Choose MT47H16M16BG-3 IT:B TR?

The MT47H16M16BG-3 IT:B TR positions itself as a compact DDR2 SDRAM solution that combines 256 Mbit density, low-voltage operation, and industrial temperature capability in an 84-ball FBGA package. Its programmable timing, on-die termination, and DLL provide the timing and signal-integrity controls needed for reliable board-level memory implementations.

This device is well suited to designers building industrial, embedded, or compact memory subsystems that require a verified DDR2 architecture, x16 organization, and temperature robustness. The combination of performance-focused timing options and a small FBGA footprint supports scalable, reliable system designs with clear integration parameters.

Request a quote or submit an RFQ to check availability, lead times, and pricing for the MT47H16M16BG-3 IT:B TR.

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