MT47H16M16BG-3:B TR

The MT47H16M16BG-3:B TR is a 256 Mbit DDR2 SDRAM organized as 16M × 16 with a parallel memory interface in an 84-ball FBGA (8 × 14) package. It implements DDR2 SDRAM architecture with 4 internal banks, DLL alignment, and selectable burst lengths for synchronous high-throughput memory transfers.

Designed for systems that require compact, low-voltage DDR2 memory, this device targets applications needing a 256 Mbit parallel DRAM solution with 1.7–1.9 V supply operation and a commercial temperature range (0 °C to 85 °C).

Key Features

• Memory Core 256 Mbit DDR2 SDRAM organized as 16M × 16 with 4 internal banks for concurrent operation.
• Performance DDR2 architecture with 4n-bit prefetch, programmable CAS latency, selectable burst lengths (BL = 4 or 8) and clocking suitable for DDR2 transfer rates; specified clock frequency 333 MHz and 450 ps access time.
• Power VDD = 1.8 V ±0.1 V (documented range 1.7 V–1.9 V) with JEDEC-standard 1.8 V I/O (SSTL_18-compatible) and on-die termination (ODT) options to help optimize signaling and power profile.
• Interface & Timing Differential data strobe (DQS/DQS#) option, DLL to align DQ and DQS transitions with CK, and WRITE latency = READ latency − 1 tCK; typical write cycle time (word page) 15 ns.
• System Reliability 64 ms refresh cycle with 8,192 refresh events and JEDEC clock jitter support for reliable DRAM retention and timing across standard operating conditions.
• Package & Temperature 84-FBGA (8 × 14) supplier device package; commercial operating temperature range 0 °C to 85 °C.

Typical Applications

• Embedded memory for DDR2 designs Compact 256 Mbit parallel DRAM for systems requiring DDR2 SDRAM in FBGA footprint.
• Consumer and computing modules Memory expansion where a 16M × 16 DDR2 configuration supports system buffers and working memory.
• Networking and communications equipment Parallel DDR2 memory for buffering and transient data storage in equipment operating within commercial temperature ranges.

Unique Advantages

• Low-voltage operation: Operates at 1.7–1.9 V (VDD = 1.8 V ±0.1 V), enabling designs that prioritize reduced power consumption and JEDEC-standard 1.8 V I/O signaling.
• DDR2 performance features: 4n-bit prefetch, DLL alignment, programmable CAS latency, and selectable burst lengths (4 or 8) provide flexibility for timing and throughput tuning.
• Signal integrity options: Differential DQS/DQS# strobe option and on-die termination support improved timing accuracy and reduced board-level signal reflections.
• Compact FBGA package: 84-ball FBGA (8 × 14) package enables space-efficient board layouts for compact systems.
• Commercial temperature rating: Rated for 0 °C to 85 °C, suitable for a wide range of indoor and consumer environments.

Why Choose MT47H16M16BG-3:B TR?

The MT47H16M16BG-3:B TR delivers a compact 256 Mbit DDR2 SDRAM solution with standard 1.8 V signaling, programmable timing, and 4-bank architecture for concurrent operation. Its combination of low-voltage operation, DDR2 timing features, and FBGA packaging makes it well suited for designs that require a parallel DDR2 memory footprint with flexible timing and reliable refresh behavior.

This device is appropriate for engineers specifying memory for commercial-temperature systems that need a verified DDR2 16M × 16 configuration and standard JEDEC-compatible electrical interfaces, offering predictable integration and performance within defined supply and temperature ranges.

Request a quote or submit a procurement inquiry to obtain pricing and availability for the MT47H16M16BG-3:B TR.