MT47H32M16BN-25:D TR

The MT47H32M16BN-25:D TR is a 512 Mbit DDR2 SDRAM device organized as 32M × 16 with a parallel memory interface in an 84-ball FBGA package. It implements DDR2 SDRAM architecture with a 4n-bit prefetch, internal DLL, and four internal banks to support concurrent memory operations.

This device targets systems requiring standard 1.8 V DDR2 memory operation at a 400 MHz clock rate (400 MT/s) with a commercial operating temperature range of 0°C to 85°C. Key design values include a 1.7–1.9 V supply window, 400 ps access time, and support for selectable burst lengths and programmable CAS latency.

Key Features

• DDR2 SDRAM core 4n-bit prefetch architecture with internal DLL and four internal banks for concurrent operation.
• Density & organization 512 Mbit density arranged as 32M × 16, suitable for parallel DDR2 memory configurations.
• Performance Rated for 400 MT/s (400 MHz clock), typical access time of 400 ps and timing grades available for DDR2-800/667/533/400 as indicated by speed grade options.
• Voltage & I/O VDD / VDDQ = 1.8 V ±0.1 V (specified supply range 1.7 V–1.9 V); JEDEC-standard 1.8 V I/O.
• Data integrity & timing Programmable CAS latency, posted CAS additive latency (AL), selectable burst lengths (BL = 4 or 8) and DLL alignment of DQ/DQS with CK.
• On-die features On-die termination (ODT) and adjustable data-output drive strength.
• Refresh & reliability 64 ms / 8,192-cycle refresh and standard 8K refresh count as defined for the device configuration.
• Package 84-ball FBGA package (10 mm × 12.5 mm option) in a 84-TFBGA footprint for high-density board mounting.
• Temperature range (commercial) Specified commercial operating temperature: 0°C ≤ T_C ≤ 85°C.
• Compliance RoHS compliant as noted in the device literature.

Unique Advantages

• Standard DDR2 interface: Provides JEDEC-standard 1.8 V DDR2 signaling (VDD/VDDQ = 1.8 V ±0.1 V) to match common DDR2 system requirements.
• Flexible timing options: Multiple speed grades and programmable CAS latency allow designers to tune performance across DDR2-400 to DDR2-800 timing points.
• Integrated signal management: DLL alignment of DQ/DQS and on-die termination reduce the burden on board-level signal conditioning and termination design.
• Compact, high-density package: 84-ball FBGA (10 mm × 12.5 mm option) delivers 512 Mbit density in a compact footprint for space-constrained applications.
• Power-optimized operation: 1.7–1.9 V supply range centered on 1.8 V supports standard DDR2 low-voltage operation to align with common platform power domains.

Why Choose IC DRAM 512MBIT PARALLEL 84FBGA?

The MT47H32M16BN-25:D TR combines a standard DDR2 SDRAM architecture with configurable timing and on-die features to simplify integration into parallel-memory systems that require a 512 Mbit density. Its combination of JEDEC-standard I/O levels, programmable latencies, selectable burst lengths and on-die termination supports a range of DDR2 timing grades while maintaining a compact FBGA footprint.

This device is appropriate for commercial-temperature designs that require a verified 1.8 V DDR2 memory solution with available speed-grade options and package variants. It delivers predictable electrical characteristics and timing flexibility to support design optimization and platform interoperability.

Request a quote or submit an inquiry to obtain pricing, lead-time and availability details for MT47H32M16BN-25:D TR.