MT47H32M16BN-3:D TR

The MT47H32M16BN-3:D TR is a 512 Mbit DDR2 SDRAM device organized as 32M × 16 with a parallel memory interface in an 84-ball FBGA package. It implements DDR2 architecture features such as a DLL, 4n-bit prefetch and options for differential data strobe to support synchronous high-speed memory operation.

This device targets board-level memory implementations that require 512 Mbit density, 1.8 V class operation, and commercial-temperature operation (0 °C to 85 °C). Key characteristics include a 333 MHz clock frequency, 450 ps access time, and package options optimized for compact footprint and high-density assembly.

Key Features

• Core / Architecture DDR2 SDRAM with 4 internal banks and 4n-bit prefetch architecture; includes a DLL to align DQ and DQS transitions with CK.
• Memory Organization 512 Mbit arranged as 32M × 16 offering parallel DDR2 interface and standard DRAM refresh (8,192-cycle refresh).
• Performance Rated for a 333 MHz clock frequency with an access time of 450 ps; supports programmable CAS latency and posted CAS additive latency.
• Timing Options Selectable burst lengths (BL = 4 or 8), programmable CL, and multiple timing grades available per datasheet.
• Signal Integrity On-die termination (ODT) and options for differential data strobe (DQS/DQS#) and adjustable data-output drive strength.
• Power Low-voltage operation: VDD/VDDQ = 1.8 V ±0.1 V (catalog voltage supply range 1.7 V – 1.9 V).
• Package 84-ball FBGA package (10 mm × 12.5 mm) in a compact BGA footprint suitable for high-density board layouts.
• Temperature Range Commercial operating temperature: 0 °C to 85 °C (T_C).
• Compliance and Options RoHS compliant and available in multiple FBGA revisions and package variants per datasheet options.

Typical Applications

• Parallel DDR2 memory subsystems — Board-level implementations requiring a 512 Mbit DDR2 device with a parallel interface and programmable timing.
• Low-voltage memory designs — Systems designed around 1.8 V DDR2 power rails where reduced supply voltage is required.
• Commercial-temperature electronics — Designs operating within 0 °C to 85 °C that need compact FBGA memory in a small footprint.

Unique Advantages

• Density and organization: 512 Mbit capacity in a 32M × 16 organization simplifies addressing for parallel memory arrays.
• Flexible timing and performance: Programmable CAS latency, posted CAS additive latency and selectable burst lengths enable tuning to system timing requirements.
• Signal and power features: On-die termination, DLL alignment and adjustable drive strength support improved signal integrity at DDR2 data rates.
• Compact FBGA package: 84-ball FBGA (10 × 12.5 mm) provides a high-density, assembly-friendly footprint for space-constrained PCBs.
• Commercial temperature suitability: Specified for 0 °C to 85 °C operation for applications targeting standard commercial environments.

Why Choose IC DRAM 512MBIT PARALLEL 84FBGA?

The MT47H32M16BN-3:D TR delivers 512 Mbit DDR2 storage in a compact 84-ball FBGA package with DDR2 architectural features—DLL alignment, 4 internal banks, ODT and programmable timing—that are directly applicable to parallel memory subsystems. Its 1.8 V operation, 333 MHz clock rating and 450 ps access time provide a clear specification set for low-voltage, synchronous memory designs operating in commercial temperature ranges.

This device is suited to engineers designing board-level DDR2 memory implementations that require defined timing flexibility, compact packaging, and standard commercial-temperature operation. Multiple timing grades and package revisions described in the product documentation support selection for specific system timing and layout constraints.

Request a quote or submit a request for pricing and availability to begin integrating the MT47H32M16BN-3:D TR into your design cycle.