MT47H32M16BN-3 IT:D TR

The MT47H32M16BN-3 IT:D TR is a 512Mbit DDR2 SDRAM organized as 32M × 16 with a parallel memory interface in an 84-ball FBGA package. It implements DDR2 architecture with a 4n-bit prefetch and 4 internal banks, providing standard DDR2 functionality for system memory applications.

This device is offered with an industrial temperature option (–40°C to 95°C) and supports JEDEC-standard 1.8V I/O. It is targeted at designs that require a compact FBGA memory device with DDR2 features and industrial temperature operation.

Key Features

• Memory Type and Organization 512 Mbit DDR2 SDRAM organized as 32M × 16 with 4 internal banks for concurrent operation.
• DDR2 Architecture 4n-bit prefetch architecture, programmable CAS latency (CL), posted CAS additive latency (AL), and selectable burst lengths (BL) of 4 or 8.
• Performance Documented clock frequency of 333 MHz and typical access time of 450 ps; write cycle time (word page) of 15 ns.
• Voltage and I/O VDD/VDDQ supply range 1.7 V to 1.9 V with JEDEC-standard 1.8V I/O (SSTL_18-compatible) and differential data strobe (DQS) options.
• On-Die Features On-die termination (ODT) and DLL to align DQ and DQS transitions with CK; adjustable data-output drive strength.
• Package 84-ball FBGA (84-TFBGA / 84-FBGA) package variant (10 mm × 12.5 mm) suitable for board-level mounting.
• Temperature Range Industrial temperature option: –40°C to 95°C (TC), identified by the IT revision.
• Reliability and Standards JEDEC clock jitter support and 64 ms, 8,192-cycle refresh timing per DDR2 specification.

Typical Applications

• Industrial embedded systems Memory for control and data buffering in equipment that requires operation across –40°C to 95°C.
• Board-level DDR2 memory implementations Parallel DDR2 SDRAM replacement or integration where 512 Mbit density and 32M × 16 organization are required.
• Compact FBGA designs Space-constrained PCBs that require an 84-ball FBGA package with standard 1.8 V DDR2 I/O.

Unique Advantages

• Industrial temperature support: Specified operation down to –40°C and up to 95°C (TC) for deployment in harsh environments.
• Standard DDR2 feature set: Programmable CAS latency, selectable burst lengths, DLL alignment, and DQS options enable flexible timing and interface configurations.
• Compact FBGA package: 84-ball FBGA (10 mm × 12.5 mm) provides a high-density footprint for space-optimized designs.
• 1.8V I/O compatibility: JEDEC-standard 1.8V I/O (SSTL_18-compatible) and VDD/VDDQ = 1.8 V ±0.1 V for standard DDR2 systems.
• On-die termination and drive control: ODT and adjustable output drive strength simplify signal integrity tuning on target PCBs.
• 4 internal banks: Enables concurrent bank operation for DDR2-style access patterns.

Why Choose MT47H32M16BN-3 IT:D TR?

The MT47H32M16BN-3 IT:D TR is a straightforward 512Mbit DDR2 SDRAM offering a standard DDR2 feature set in a compact 84-ball FBGA package with industrial temperature capability. Its 32M × 16 organization, JEDEC 1.8 V I/O compatibility, on-die termination, and selectable timing parameters make it suitable for systems that require predictable DDR2 behavior and board-level integration.

This device is appropriate for designers specifying a DDR2 memory component with industrial temperature range and a compact FBGA footprint, delivering the core DDR2 functionality and timing flexibility documented in the product datasheet.

Request a quote or submit a parts inquiry to obtain pricing, availability, and lead-time information for the MT47H32M16BN-3 IT:D TR.