MT47H16M16BG-5E:B TR

The MT47H16M16BG-5E:B TR is a 256 Mbit DDR2 SDRAM organized as 16M × 16 with a parallel memory interface in an 84-ball FBGA (8 × 14 mm) package. It implements DDR2 architecture with 4 internal banks, programmable timing, and features designed for system memory applications requiring low-voltage operation.

This device targets designs that require compact, low-voltage DDR2 memory with defined timing control and on-die features. Key value propositions include 1.7 V–1.9 V supply operation, 200 MHz clock frequency, selectable burst lengths and on-die termination for integration into systems using DDR2 parallel memory.

Key Features

• Memory Type & Organization  DDR2 SDRAM, 256 Mbit capacity arranged as 16M × 16 with 4 internal banks for concurrent operations.
• Electrical & Voltage  VDD supply range 1.7 V to 1.9 V (datasheet specifies VDD = +1.8 V ±0.1 V) with JEDEC-standard 1.8 V I/O.
• Performance & Timing  200 MHz clock frequency with 600 ps access time and a 15 ns write cycle time (word/page). Programmable CAS latency and selectable burst lengths (4 or 8) allow timing flexibility.
• Data Integrity & Interface  DLL to align DQ and DQS transitions, differential data strobe (DQS/DQS#) option and on-die termination (ODT) to support signal integrity on parallel DDR2 interfaces.
• Prefetch & Architecture  4n-bit prefetch architecture and concurrent-bank operation to support DDR2 read/write sequencing.
• Refresh & Reliability  64 ms, 8,192-cycle refresh mechanism as specified in the datasheet.
• Package & Mounting  84-FBGA (8 × 14 mm) package, surface-mount FBGA format for compact board-level integration.
• Operating Range  Commercial temperature grade: 0 °C to 85 °C (TC).
• Standards & Compliance  Supports JEDEC clock jitter specification; datasheet lists RoHS compliance and standard JEDEC DDR2 feature set.

Typical Applications

• DDR2 Memory Expansion  Use as 256 Mbit parallel DDR2 memory in systems that require a 16M × 16 organization and standard DDR2 timing control.
• Embedded Systems  Compact FBGA package and low-voltage operation suit embedded platforms that integrate DDR2 SDRAM for program or data storage.
• FPGA and ASIC External Memory  Provides a parallel DDR2 interface option for FPGA/ASIC designs needing discrete DRAM with programmable CAS latency and burst control.
• Legacy DDR2 Platforms  Drop-in DDR2 SDRAM solution for designs and boards using JEDEC-standard 1.8 V DDR2 memory interfaces.

Unique Advantages

• Low-voltage operation:  1.7 V–1.9 V supply (VDD = +1.8 V ±0.1 V) reduces power compared with higher-voltage alternatives and matches JEDEC 1.8 V systems.
• Flexible timing control:  Programmable CAS latency, selectable burst lengths and DLL alignment enable tuning for system timing and throughput trade-offs.
• Signal integrity features:  On-die termination and differential DQS options help maintain reliable high-speed transfers on parallel DDR2 buses.
• Compact package:  84-ball FBGA (8 × 14 mm) minimizes board footprint while providing a full 16-bit-wide data path.
• Defined operating range:  Commercial temperature operation (0 °C to 85 °C) and documented timing grades facilitate system qualification for standard environments.

Why Choose MT47H16M16BG-5E:B TR?

The MT47H16M16BG-5E:B TR provides a compact, low-voltage DDR2 SDRAM option with a 16M × 16 organization and features targeted at designs requiring programmable timing, on-die termination and differential strobe options. Its 84-FBGA package and defined commercial temperature range make it suitable for system-level memory expansion where JEDEC-standard DDR2 behavior is required.

This device is suited to engineers integrating parallel DDR2 memory into embedded platforms, FPGAs/ASICs and legacy DDR2 systems who need verifiable timing parameters, flexible burst and latency control, and industry-standard electrical characteristics detailed in the datasheet.

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