MT47H16M16BG-5E:B

The MT47H16M16BG-5E:B is a 256 Mbit DDR2 SDRAM organized as 16M x 16 with a parallel memory interface in an 84-ball FBGA package. It implements DDR2 architecture features such as a 4n-bit prefetch and an internal DLL to align data transitions with clock signals.

Designed for DDR2-compatible memory subsystems, this device provides a compact 84-FBGA form factor, 1.7–1.9 V supply operation, and timing options suited to 200 MHz clock operation (400 MT/s data rate), making it appropriate for applications requiring mid-density volatile system memory.

Key Features

• Core architecture 4n-bit prefetch DDR2 SDRAM with an internal DLL and four internal banks for concurrent operation.
• Memory capacity & organization 256 Mbit total capacity, organized as 16M × 16 with 4 internal banks; JEDEC address mapping provided in datasheet.
• Interface & timing Parallel DDR2 interface with programmable CAS latency, selectable burst lengths (BL = 4 or 8), and support for JEDEC clock jitter specifications. Specified clock frequency: 200 MHz; access time: 600 ps; write cycle time (word page): 15 ns.
• Voltage & I/O VDD and VDDQ nominally +1.8 V (range 1.7 V to 1.9 V); JEDEC-standard 1.8 V I/O (SSTL_18-compatible).
• Signal options Differential data strobe (DQS/DQS#) available as an option; DLL aligns DQ and DQS transitions with CK.
• Data integrity & control On-die termination (ODT) and adjustable data-output drive strength are supported; refresh architecture includes 64 ms / 8,192-cycle refresh.
• Package 84-ball FBGA (8 mm × 14 mm) compact package in an FBGA footprint for high-density board designs.
• Temperature range Commercial operating temperature range: 0 °C to 85 °C (T_C), per the specified operating temperature.
• Standards & compliance Device documentation lists RoHS compliance as a feature in the product datasheet.

Typical Applications

• DDR2 system memory Use as volatile system memory in DDR2-compatible designs requiring a 256 Mbit x16 device.
• Compact module integration Suitable for board-level designs that require a small 84-ball FBGA footprint for mid-density DRAM.
• Parallel-interface buffering Employed where parallel DDR2 buffering with programmable latency and selectable burst lengths is needed.

Unique Advantages

• Mid-density 16M × 16 organization: Provides 256 Mbit capacity in a x16 configuration that simplifies data-path implementation for parallel memory systems.
• Low-voltage DDR2 operation: Nominal 1.8 V operation (1.7–1.9 V range) reduces power domain complexity where 1.8 V supplies are used.
• Compact FBGA packaging: 84-ball FBGA (8×14 mm) minimizes board area while maintaining ball-out connectivity for high-density layouts.
• Flexible timing and drive options: Programmable CAS latency, selectable burst lengths, adjustable output drive strength and ODT enable tuning for system timing and signal integrity.
• DDR2 feature set: Internal DLL, differential DQS option, and 4-bank architecture support common DDR2 timing and performance requirements.

Why Choose MT47H16M16BG-5E:B?

The MT47H16M16BG-5E:B positions itself as a compact, mid-density DDR2 SDRAM device for designs that require a 256 Mbit x16 memory element with standard DDR2 features. Its 84-FBGA package, 1.7–1.9 V supply range, and programmable timing options make it suitable for DDR2-compatible memory subsystems where board area, voltage compatibility, and timing flexibility matter.

This device is appropriate for engineers specifying volatile DRAM capacity in embedded and board-level systems that adhere to DDR2 signaling and JEDEC timing conventions, and where commercial temperature operation (0 °C to 85 °C) is acceptable.

Request a quote or submit an inquiry to obtain current pricing and availability for the MT47H16M16BG-5E:B DRAM device.