MT47H32M16BN-25E IT:D TR

The MT47H32M16BN-25E IT:D TR is a 512Mbit DDR2 SDRAM device in a 84-ball FBGA package with a parallel memory interface. It implements DDR2 SDRAM architecture with a 32M × 16 organization and is offered in an industrial-temperature option.

Designed for systems requiring compact, board-level DDR2 memory, this device provides programmable timing, 1.8V I/O, and a range of speed grades for integration into legacy DDR2 platforms or designs that require a parallel DDR2 memory interface.

Key Features

• Memory Technology: DDR2 SDRAM volatile memory with a 32M × 16 organization (8M × 16 × 4 banks) yielding 512 Mbit density.
• Performance & Timing: Supports multiple timing grades including -25E (DDR2-800 timing options); clock frequency listed at 400 MHz and an access time of 400 ps. Selectable burst lengths of 4 or 8 and programmable CAS latency.
• Power: VDD/VDDQ = +1.8V ±0.1V with supply range 1.7 V to 1.9 V specified for the device.
• Interface & I/O: JEDEC-standard 1.8V I/O (SSTL_18-compatible) with differential data strobe (DQS/DQS#) option and DLL to align DQ and DQS transitions with CK.
• On-die Features: On-die termination (ODT) and adjustable data-output drive strength to help manage signal integrity on-board.
• Banking & Architecture: Four internal banks for concurrent operation and a 4n-bit prefetch architecture.
• Reliability & Refresh: 64ms, 8,192-cycle refresh and standard refresh count of 8K cycles per datasheet tables.
• Package & Mounting: 84-ball FBGA package (10 mm × 12.5 mm footprint) in a 84-TFBGA/SupplierDevicePackage format, surface-mount FBGA construction.
• Temperature Range: Industrial temperature option (IT) supporting an operating case temperature range of -40°C to 95°C.
• Standards & Compliance: Datasheet lists RoHS compliance and JEDEC support for DDR2 timing and jitter specifications.

Typical Applications

• Legacy DDR2 system memory: Provides board-level 512Mbit DDR2 memory for platforms and modules that require parallel DDR2 SDRAM devices and JEDEC DDR2 timing options.
• Industrial embedded systems: Industrial-temperature (-40°C to 95°C) operation supports designs that require extended temperature range memory components.
• Board-level memory expansion: Compact 84-ball FBGA package enables higher-density memory on space-constrained PCBs while maintaining DDR2 interface compatibility.

Unique Advantages

• Compact, high-density package: 512 Mbit in an 84-ball FBGA (10 mm × 12.5 mm) reduces board area for memory implementations.
• Flexible timing options: Multiple speed and CAS latency grades (including -25E timing options) allow matching device timing to system requirements.
• Signal integrity controls: On-die termination and adjustable drive strength simplify board routing and termination strategies.
• Industrial temperature support: -40°C to 95°C operating range enables use in temperature-challenging environments where industrial ratings are required.
• JEDEC-compatible I/O: 1.8V SSTL_18-compatible I/O and differential DQS options provide standard DDR2 signaling for interoperability with DDR2 memory controllers.
• Banked architecture: Four internal banks and 4n-bit prefetch architecture support concurrent operations and standard DDR2 burst modes.

Why Choose IC DRAM 512MBIT PARALLEL 84FBGA?

The MT47H32M16BN-25E IT:D TR targets designs needing a compact, board-mount DDR2 SDRAM device with industrial-temperature operation and JEDEC-standard 1.8V I/O. Its 512 Mbit density, programmable timing options, and on-die termination provide predictable electrical behavior and flexible timing configuration for legacy DDR2 designs or systems with parallel DDR2 interfaces.

This device suits engineers and procurement teams seeking a proven DDR2 memory component with configurable timing grades, standard DDR2 signal features, and a small FBGA footprint for space-constrained designs where industrial temperature performance is required.

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