MT47H32M16BN-25E:D TR

The MT47H32M16BN-25E:D TR is a 512 Mbit DDR2 SDRAM organized as 32M × 16 with a parallel memory interface in an 84-ball FBGA package. It implements DDR2 architecture and JEDEC-standard 1.8V I/O operating across a commercial temperature range (0°C to 85°C).

Designed for board-level memory integration, this device provides DDR2 performance with low-voltage operation (VDD/VDDQ ≈ 1.8V) and on-die features that simplify timing and signal integrity in compact system designs.

Key Features

• Memory Architecture  512 Mbit DDR2 SDRAM organized as 32M × 16 with 4 internal banks for concurrent operation.
• Performance & Timing  Clock frequency listed at 400 MHz with an access time of 400 ps; supports programmable CAS latency and selectable burst lengths (4 or 8).
• Power  VDD and VDDQ at +1.8V ±0.1V (device supply range 1.7V–1.9V), providing JEDEC-standard 1.8V I/O (SSTL_18-compatible).
• Data Path & Signal Integrity  Differential data strobe (DQS/DQS#) option, DLL to align DQ and DQS with CK, and on-die termination (ODT) to aid signal timing and integrity.
• Timing Options  Available speed grades include variants such as -25E; datasheet timing examples list cycle times including 2.5 ns @ CL = 5 for DDR2-800 variants.
• Package & Mounting  84-ball TFBGA package (84-FBGA, 10 mm × 12.5 mm Rev. D BN) suited for compact surface-mount placement.
• Reliability Features  4n-bit prefetch architecture, programmable drive strength, and standard refresh (64 ms / 8,192-cycle refresh) for stable operation.
• Operating Range  Commercial temperature option specified: 0°C ≤ T_C ≤ 85°C.

Typical Applications

• Commercial embedded memory  Provides 512 Mbit of DDR2 parallel memory for systems and modules that operate within a 0°C–85°C commercial temperature range.
• High-speed buffering and data staging  32M × 16 organization, 4 internal banks and 400 MHz clock capability support parallel memory operations and burst transfers.
• Compact board designs  84-ball FBGA (10×12.5 mm) package enables dense board-level mounting where space is constrained.

Unique Advantages

• Low-voltage DDR2 operation: VDD/VDDQ at +1.8V ±0.1V reduces power domain complexity for 1.8V systems and matches JEDEC SSTL_18 I/O standards.
• Flexible timing and throughput: Programmable CAS latency, selectable burst lengths and multiple speed-grade options allow designers to balance latency and bandwidth.
• Signal integrity support: DLL alignment, differential DQS options and on-die termination help maintain reliable high-speed transfers on parallel bus implementations.
• Compact FBGA footprint: 84-ball FBGA (10 mm × 12.5 mm) provides a small, soldered package for streamlined board layouts.
• Standardized refresh and bank architecture: 4 internal banks and standard 8K refresh count simplify memory management for system designers.

Why Choose IC DRAM 512MBIT PARALLEL 84FBGA?

The MT47H32M16BN-25E:D TR delivers a verified DDR2 SDRAM building block from Micron Technology Inc. that combines 512 Mbit capacity, a 32M × 16 organization, and JEDEC-compatible 1.8V I/O in a compact 84-ball FBGA package. Its programmable timing, on-die termination, and DLL support make it suitable for commercial applications requiring parallel DDR2 memory with controllable latency and signal integrity features.

This device is appropriate for designers integrating board-level DDR2 memory where space, low-voltage operation, and standard commercial-temperature performance are required. The documented speed grades and timing options provide flexibility for matching system-level throughput and latency requirements.

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