MT47H32M16BN-37E IT:D TR

The MT47H32M16BN-37E IT:D TR is a 512 Mbit DDR2 SDRAM device from Micron Technology, organized as 32M × 16 with a parallel memory interface. It provides DDR2 architecture with features such as DLL alignment, selectable burst lengths and on-die termination for board‑level memory implementations.

This device is offered in an 84-ball FBGA package and an industrial temperature option, making it suitable for system designs that require 1.8 V DDR2 memory with industrial temperature range operation.

Key Features

• Memory Core 512 Mbit DDR2 SDRAM organized as 32M × 16 with 4 internal banks and a 4n‑bit prefetch architecture for DDR2 operation.
• Performance & Timing Clock frequency listed at 267 MHz with an access time of 500 ps and a write cycle time (word/page) of 15 ns. Programmable CAS latency (CL) and selectable burst lengths (4 or 8) enable timing flexibility.
• Power & I/O Operates from VDD/VDDQ = 1.7 V to 1.9 V (JEDEC‑standard 1.8 V I/O, SSTL_18‑compatible). On‑die termination (ODT) and adjustable data‑output drive strength are supported.
• Interface & Signal Integrity Parallel DDR2 interface with options including differential data strobe (DQS/DQS#) and a DLL to align DQ/DQS transitions with CK.
• Package 84‑ball FBGA package; supplier device package specified as 84‑FBGA (10 mm × 12.5 mm) and package case 84‑TFBGA.
• Temperature & Options Industrial temperature grade: specified operating temperature range −40°C to 95°C (TC). Part number includes the IT option.
• Standards & Reliability Features in the datasheet include JEDEC‑standard I/O compatibility and a 64 ms, 8,192‑cycle refresh; the datasheet also lists RoHS compliance.

Typical Applications

• Industrial control systems — Provides DDR2 memory capacity and industrial temperature range for embedded controllers and automation equipment.
• Embedded computing — Suitable for board‑level memory expansion in embedded platforms requiring a parallel DDR2 interface and compact FBGA packaging.
• Networking and communications equipment — Can be used where DDR2 buffer memory with selectable timing and ODT is required in constrained board space.

Unique Advantages

• Industrial‑temperature rated: Specified for −40°C to 95°C (TC), addressing designs that require extended ambient operation.
• Low‑voltage DDR2 operation: 1.7 V–1.9 V supply range with JEDEC‑standard 1.8 V I/O reduces power envelope for system memory.
• Compact FBGA footprint: 84‑ball FBGA (10 mm × 12.5 mm) enables high‑density mounting in space‑constrained PCBs.
• Flexible timing and signal control: Programmable CAS latency, selectable burst lengths and DLL alignment support a range of system timing requirements.
• On‑die termination and drive control: ODT and adjustable output drive strength help simplify board termination and signal‑integrity design.

Why Choose MT47H32M16BN-37E IT:D TR?

The MT47H32M16BN-37E IT:D TR is a straightforward DDR2 SDRAM option for designers needing 512 Mbit of parallel DDR2 memory in an industrial temperature grade and compact FBGA package. Its 1.8 V operation, timing flexibility and on‑die termination features support robust board‑level memory implementations where DDR2 interfaces are required.

Delivered by Micron Technology, this device is suitable for systems that prioritize known DDR2 memory behavior, industrial temperature operation and compact package form factors.

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