MT47H32M16BN-5E IT:D TR

The MT47H32M16BN-5E IT:D TR is a 512Mbit DDR2 SDRAM organized as 32M x 16 with a parallel memory interface in an 84-ball FBGA package. It implements DDR2 architecture with a 4n-bit prefetch and internal features such as a DLL, on-die termination and selectable burst lengths to support synchronous high-speed memory operation.

This device targets board-level memory subsystems and embedded designs that require a 512Mbit DDR2 DRAM with industrial-temperature operation and low-voltage (1.7–1.9 V) supply rails.

Key Features

• Core / Memory Architecture 512Mbit DDR2 SDRAM organized as 32M × 16 with 4 internal banks and a 4n-bit prefetch architecture for DDR2 operation.
• Performance & Timing Supports programmable CAS latency, posted CAS additive latency, selectable burst lengths (4 or 8) and a DLL to align DQ and DQS with CK; specified access time 600 ps and clock frequency 200 MHz.
• Interface JEDEC-standard 1.8 V I/O (SSTL_18-compatible) with optional differential data strobe (DQS/DQS#) and duplicate output strobe (RDQS) option for x8 devices.
• Power Low-voltage operation with VDD / VDDQ = 1.8 V ±0.1 V (spec sheet range 1.7 V–1.9 V) to support reduced-power system designs.
• System Reliability & Timing Controls On-die termination (ODT), adjustable data-output drive strength, and a 64 ms, 8,192-cycle refresh scheme to maintain signal integrity and data retention.
• Package & Temperature Options 84-ball FBGA package (10 mm × 12.5 mm footprint option shown) and an Industrial temperature option rated for –40°C to 95°C (TC).
• Standards & Options RoHS compliant with options for various FBGA revisions and timing grades; supports JEDEC clock jitter specification.

Typical Applications

• Industrial Systems Used in control and instrumentation platforms that require DDR2 memory capable of industrial temperature operation (–40°C to 95°C TC).
• Board-level Memory Subsystems Deployed on memory modules and daughtercards where a 512Mbit x16 DDR2 device in an 84-ball FBGA footprint is required.
• Embedded Designs Suitable for embedded devices and appliances that integrate parallel DDR2 SDRAM for system working memory with programmable timing.

Unique Advantages

• Industrial-temperature rating: Rated for –40°C to 95°C (TC), enabling designs that require extended temperature operation.
• Low-voltage DDR2 operation: VDD/VDDQ = 1.8 V ±0.1 V (1.7–1.9 V range) reduces system power compared with higher-voltage memory solutions.
• Flexible timing and latency control: Programmable CAS latency, posted CAS additive latency, selectable burst lengths and DLL alignment allow designers to tune performance to system timing requirements.
• Signal integrity features: On-die termination and adjustable drive strength help manage signal integrity in high-speed parallel memory interfaces.
• Compact FBGA footprint: 84-ball FBGA package (example 10 mm × 12.5 mm option) provides a compact, board-friendly package for dense designs.
• JEDEC-compliant I/O: SSTL_18-compatible 1.8 V I/O and support for JEDEC clock jitter specifications simplify system-level compliance.

Why Choose MT47H32M16BN-5E IT:D TR?

The MT47H32M16BN-5E IT:D TR combines DDR2 architecture with configurable timing, on-die termination and industrial-temperature capability to deliver a stable 512Mbit DRAM option for board-level and embedded memory designs. Its low-voltage operation and FBGA packaging make it suitable for compact systems that require a parallel DDR2 memory interface.

This part is appropriate for engineers specifying a 32M × 16 DDR2 device with programmable latency and signal-integrity features, and for projects that require operation across an industrial temperature range and JEDEC-compatible 1.8 V I/O.

If you would like pricing, lead time or availability for the MT47H32M16BN-5E IT:D TR, submit a quote request or contact procurement to request a formal quote and technical support information.