MT47H32M16CC-3:B

The MT47H32M16CC-3:B is a 512 Mbit DDR2 SDRAM organized as 32M × 16 with a parallel memory interface in an 84-ball FBGA package. It implements DDR2 architecture with a 4n-bit prefetch and internal DLL to support synchronized data transfers at high data rates.

This device is targeted for designs that require 512 Mbit of volatile DDR2 memory in a compact 84-FBGA (12 × 12.5 mm) footprint, operating from a 1.7 V to 1.9 V supply and a commercial temperature range of 0 °C to 85 °C.

Key Features

• Memory Core & Architecture — DDR2 SDRAM with 4n-bit prefetch and 4 internal banks; memory organized as 32M × 16 for a total of 512 Mbit.
• Performance — Specified clock frequency of 333 MHz with an access time of 450 ps and write cycle time (word page) of 15 ns for responsive memory transfers.
• Voltage & I/O — VDD supply range 1.7 V to 1.9 V; JEDEC-standard 1.8 V I/O (SSTL_18-compatible) support is provided in the product family.
• Timing & Latency — Programmable CAS latency, posted CAS additive latency (AL), and support for selectable burst lengths of 4 or 8, enabling flexible timing configurations.
• Signal Integrity & Timing Alignment — Internal DLL aligns DQ and DQS transitions with CK; on-die termination (ODT) and differential data strobe (DQS/DQS#) options are supported within the datasheet feature set.
• Package — 84-ball TFBGA (12 mm × 12.5 mm) supplier device package (84-FBGA) optimized for space-constrained PCBs.
• Operating Range — Commercial temperature operation specified from 0 °C to 85 °C (TC).

Typical Applications

• System memory modules — Provides 512 Mbit of parallel DDR2 storage for designs that integrate x16 DDR2 devices.
• Embedded memory expansion — Useful where compact FBGA packaging and 1.8 V supply operation are required for embedded memory capacity.
• High-speed buffering — Employed as volatile DDR2 buffer memory in designs needing programmable CAS latency and selectable burst lengths.

Unique Advantages

• Standard 1.8 V I/O compatibility: JEDEC-standard 1.8 V I/O (SSTL_18-compatible) allows integration with systems using standard DDR2 signaling levels.
• Flexible timing configuration: Programmable CAS latency and selectable burst lengths (4 or 8) enable tuning for different system timing requirements.
• Integrated signal timing features: DLL alignment of DQ/DQS and on-die termination options improve data timing alignment and signal integrity.
• Compact FBGA package: 84-ball FBGA (12 × 12.5 mm) reduces PCB footprint while delivering 512 Mbit density in an x16 organization.
• Commercial temperature rating: Specified operation from 0 °C to 85 °C for general-purpose commercial applications.

Why Choose IC DRAM 512MBIT PARALLEL 84FBGA?

The MT47H32M16CC-3:B delivers a 512 Mbit DDR2 SDRAM solution with x16 organization, programmable timing, and signal-integrity features such as DLL alignment and on-die termination. Its 84-ball FBGA package and 1.7 V–1.9 V supply make it suitable for compact commercial designs requiring parallel DDR2 memory.

Engineers specifying this device benefit from configurable latency and burst options, support for standard 1.8 V I/O signaling, and a datasheet-defined commercial operating temperature range, enabling predictable integration into memory subsystems that require 512 Mbit volatile storage.

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