MT47H32M16CC-37E IT:B TR

The MT47H32M16CC-37E IT:B TR is a 512 Mbit DDR2 SDRAM organized as 32M × 16 with a parallel memory interface. It implements DDR2 architecture with a 4n-bit prefetch, on-die termination and programmable timing options for synchronous high-speed memory operations.

Targeted for systems that require board-level DDR2 memory in an 84-ball FBGA package, this device offers industrial temperature operation and a 1.8 V operating range to support embedded and industrial designs needing stable, low-voltage DRAM.

Key Features

• Memory Core 512 Mbit DDR2 SDRAM organized as 32M × 16 with 4 internal banks and 4n-bit prefetch architecture for standard DDR2 operation.
• Speed & Timing Supports programmable CAS latency and selectable burst lengths (4 or 8). Specified clock frequency in the product data is 267 MHz with access time of 500 ps and a word page write cycle time of 15 ns.
• Power VDD and VDDQ supply range of 1.7 V to 1.9 V (JEDEC-standard 1.8 V I/O).
• Signal Integrity On-die termination (ODT), DLL to align DQ/DQS with CK, and optional differential data strobe (DQS/DQS#) improve timing alignment and signal performance.
• Package 84-ball FBGA (12 mm × 12.5 mm) footprint (84-TFBGA / 84-FBGA) suitable for compact board-level integration.
• Temperature Range Industrial temperature option: −40°C to 95°C (TC) for extended-environment operation.
• Reliability & Standards JEDEC-compatible DDR2 signaling; supports standard refresh (8,192-cycle, 64 ms) and includes features such as programmable drive strength and posted CAS additive latency.
• Form Factor & Mounting 84-FBGA, surface-mount package designed for board-level placement; part supplied in tape-and-reel (TR) format as indicated.

Typical Applications

• Industrial control systems — Provides extended-temperature DDR2 memory for embedded controllers and data buffering in industrial equipment.
• Embedded platforms — Board-level memory expansion for processors and SoCs that use parallel DDR2 SDRAM.
• Communications equipment — Frame buffering and packet memory in network and communications modules requiring DDR2 architecture.

Unique Advantages

• Industrial-temperature capability: Rated for −40°C to 95°C, enabling use in environments with wide temperature ranges.
• Low-voltage operation: 1.7 V–1.9 V supply range aligned with JEDEC 1.8 V I/O standards to reduce power and simplify system rail requirements.
• Signal and timing options: DLL, ODT and selectable burst lengths support flexible timing tuning and improved signal integrity on high-speed buses.
• Compact FBGA package: 84-ball FBGA (12 mm × 12.5 mm) provides a small footprint for space-constrained PCB layouts.
• Standard DDR2 feature set: Programmable CAS latency, 4 internal banks and standard refresh scheme for predictable, interoperable DDR2 operation.

Why Choose IC DRAM 512MBIT PAR 84FBGA?

The MT47H32M16CC-37E IT:B TR combines a standard DDR2 feature set with industrial-temperature operation and a compact 84-ball FBGA footprint, making it suitable for embedded and industrial designs that require 512 Mbit of parallel DDR2 memory. Its low-voltage 1.8 V operation and on-die features such as ODT and DLL provide designers with predictable timing behavior and options for signal integrity tuning.

This Micron 512 Mbit DDR2 device is appropriate for engineers specifying board-level memory where standard DDR2 timing flexibility, small package size, and extended temperature capability are important considerations.

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