MT47H32M16CC-37E:B TR

The MT47H32M16CC-37E:B TR is a 512 Mbit DDR2 SDRAM organized as 32M × 16 with a parallel memory interface and 4 internal banks. It implements DDR2 architecture with 4n-bit prefetch, on-die termination and programmable timing options for commercial embedded memory applications.

Designed for systems requiring a compact, parallel DDR2 memory device, this part offers JEDEC-standard 1.8 V I/O, a small 84-ball FBGA package and commercial operating temperature range for integration into mainstream embedded products and consumer electronics operating at 0°C to 85°C.

Key Features

• Memory Architecture — 512 Mbit DRAM organized as 32M × 16 with 4 internal banks and 4n-bit prefetch architecture for standard DDR2 operation.
• DDR2 Technology & I/O — DDR2 SDRAM with JEDEC-standard 1.8 V I/O (Vdd = +1.8V ±0.1V, VddQ = +1.8V ±0.1V) supporting SSTL_18-compatible signaling.
• Timing Options — Part grade -37E supports 3.75 ns cycle time at CL = 4 (DDR2-533); selectable burst lengths of 4 or 8 and programmable CAS latency provide flexible timing configurations.
• Performance Characteristics — Specified clock frequency of 267 MHz and access time of 500 ps; typical write cycle time (word/page) 15 ns.
• Signal Integrity — On-die termination (ODT), differential data strobe (DQS/DQS#) option and an internal DLL to align DQ and DQS transitions with CK, helping maintain signal timing.
• Package — 84-ball TFBGA (12 mm × 12.5 mm) package (84-FBGA Rev. B CC) for compact board-level integration.
• Operating Conditions — Commercial temperature rating with specified device operating temperature 0°C to 85°C (TC) and supply voltage range 1.7 V to 1.9 V.

Typical Applications

• Commercial embedded systems — Provides 512 Mbit DDR2 parallel memory for embedded controllers and modules operating within 0°C to 85°C.
• Consumer electronics — Compact FBGA package and DDR2 timing options suitable for integration into consumer devices that require off-chip SDRAM.
• Memory expansion for standard boards — 32M × 16 organization and JEDEC-standard signaling make it suitable for designs requiring parallel DDR2 memory capacity and standard timing modes.

Unique Advantages

• Standard DDR2 signaling (1.8 V) — Vdd and VddQ at 1.8 V ±0.1 V enable compatibility with JEDEC SSTL_18-compatible systems.
• Flexible timing — Programmable CAS latency and selectable burst lengths (4 or 8) allow tuning for different system timing requirements.
• Integrated signal management — DLL, differential DQS options and on-die termination support improved timing alignment and signal integrity on high-speed parallel buses.
• Compact package — 84-ball FBGA (12 mm × 12.5 mm) delivers a high-density memory footprint for space-constrained board designs.
• Commercial temperature support — Specified 0°C to 85°C operating range for mainstream applications and consumer-grade environments.

Why Choose MT47H32M16CC-37E:B TR?

The MT47H32M16CC-37E:B TR combines standard DDR2 SDRAM architecture, JEDEC-compatible 1.8 V I/O and programmable timing features to provide a reliable 512 Mbit parallel memory option in a compact 84-ball FBGA package. Its built-in signal integrity features—ODT, DLL and DQS options—help preserve timing performance in high-speed parallel designs.

This device is well suited for designers and procurement teams specifying commercial-grade DDR2 memory for embedded systems and consumer applications that require a balance of density, configurable timing and compact board-level integration.

Please request a quote or submit a sales inquiry to receive pricing and availability for the MT47H32M16CC-37E:B TR.