MT47H32M16CC-3E:B TR

The MT47H32M16CC-3E:B TR is a 512 Mbit DDR2 SDRAM device organized as 32M × 16 with a parallel memory interface in an 84-ball FBGA package. It implements a DDR2 architecture with a 4n-bit prefetch, on-die DLL and options for differential data strobe to support synchronized high-speed data transfers.

This device is intended for system designs that require a compact, parallel DDR2 memory component offering programmable latency, selectable burst lengths, and standard JEDEC DDR2 signaling and timing options. Key value lies in its combination of DDR2 performance characteristics, compact FBGA packaging, and JEDEC-aligned interface behavior.

Key Features

• DDR2 SDRAM Core  512 Mbit density implemented as 32M × 16 with 4 internal banks and a 4n-bit prefetch architecture.
• Memory Organization & Performance  Memory organization 32M × 16, clock frequency listed at 333 MHz, and an access time of 450 ps; selectable burst lengths of 4 or 8 and programmable CAS latency.
• Timing Options  Supports JEDEC timing grades including CL options shown in the datasheet (examples include DDR2-667/533/400 timing entries).
• Signal & Interface  JEDEC-standard 1.8 V I/O (SSTL_18-compatible) with differential data strobe (DQS/DQS#) options and DLL to align DQ/DQS with CK.
• Power  Operating voltage range VDD/VDDQ = 1.7 V to 1.9 V.
• System Timing & Refresh  64 ms, 8,192-cycle refresh scheme and typical write-cycle time (word page) of 15 ns.
• Signal Integrity & Drive  On-die termination (ODT) and adjustable data-output drive strength for improved board-level signal behavior.
• Package  84-ball FBGA (84-TFBGA) supplier package footprint 12 mm × 12.5 mm (84-FBGA).
• Operating Temperature  Commercial temperature range 0 °C to 85 °C (TC).

Typical Applications

• Parallel DDR2 System Memory — Acts as a parallel DDR2 SDRAM component where 512 Mbit density and a x16 interface are required for system memory implementations.
• Embedded Memory Subsystems — Provides compact FBGA packaging and JEDEC DDR2 interface for embedded platforms that integrate discrete DRAM devices.
• Consumer and Industrial Electronics — Suitable for designs operating within the listed commercial temperature range that require DDR2 memory with programmable latency and selectable burst modes.

Unique Advantages

• Compact FBGA Footprint: The 84-ball FBGA (12 mm × 12.5 mm) package minimizes board area for space-constrained designs.
• DDR2 Interface Compliance: JEDEC-standard 1.8 V I/O and documented timing grades support predictable integration into DDR2 systems.
• Flexible Timing and Burst Control: Programmable CAS latency and selectable burst lengths (4 or 8) allow tuning for target system performance.
• Signal Integrity Features: On-die termination (ODT) and adjustable output drive strength aid in maintaining signal margins at DDR2 speeds.
• Low-Voltage Operation: VDD/VDDQ range of 1.7 V to 1.9 V supports low-voltage DDR2 power domains.
• Standard Refresh and Reliability Mechanisms: 8,192-cycle refresh and internal bank architecture enable standard DRAM refresh management and concurrent bank operations.

Why Choose MT47H32M16CC-3E:B TR?

The MT47H32M16CC-3E:B TR positions as a straightforward, JEDEC-aligned DDR2 SDRAM device delivering 512 Mbit capacity in a compact 84-ball FBGA package. Its combination of x16 organization, programmable latency, selectable burst modes and on-die termination makes it suitable for designs that require a documented DDR2 memory component with predictable timing behavior and compact board footprint.

This device is well suited for engineers and procurement teams specifying discrete DDR2 memory for embedded systems, consumer electronics, or industrial designs that operate within the stated commercial temperature range and voltage envelope. The documented timing options and interface features support integration into systems with defined DDR2 timing requirements.

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