MT47H32M16CC-5E L:B TR

The MT47H32M16CC-5E L:B TR is a 512 Mbit DDR2 SDRAM device organized as 32M × 16 with a parallel memory interface. It implements a DDR2 architecture with on-die features aimed at high-performance synchronous memory applications.

Designed for commercial-temperature systems, the device delivers a 200 MHz clock (DDR2 timing), 600 ps access time and operates from a 1.7 V to 1.9 V supply, offering a compact 84-ball FBGA footprint for space-constrained board designs.

Key Features

• Core / Memory Architecture DDR2 SDRAM organized as 32M × 16 (512 Mbit) with 4 internal banks and a 4n-bit prefetch architecture for concurrent bank operation.
• Performance & Timing 200 MHz clock frequency (DDR2 timing) and 600 ps access time; programmable CAS latency and selectable burst lengths allow flexible timing configuration.
• Voltage & I/O Vdd = 1.7 V to 1.9 V (JEDEC-standard 1.8 V I/O compatibility) to support low-voltage system designs.
• Signal Integrity On-die termination (ODT) and DLL to align DQ/DQS transitions with CK, plus differential data strobe (DQS/DQS#) option to support reliable high-speed transfers.
• Refresh & Reliability Standard 8,192-cycle refresh (64 ms) implementation and options for additive latency and posted CAS, enabling stable retention and timing control.
• Package & Mechanical 84-ball TFBGA package (12 mm × 12.5 mm) suitable for compact board layouts.
• Operating Range Commercial temperature grade: 0°C to 85°C (T_C).

Typical Applications

• Embedded system memory — Temporary storage and working memory for processors and controllers that require parallel DDR2 DRAM.
• Buffering and frame memory — Low-voltage DDR2 storage for data buffering in video, graphics or capture pipelines.
• General-purpose computing modules — Parallel memory banks for modules and boards where a compact FBGA package is required.

Unique Advantages

• Low-voltage operation: 1.7 V–1.9 V supply reduces power draw relative to higher-voltage memory options.
• Compact FBGA footprint: 84-ball, 12 mm × 12.5 mm package supports dense board integration and space-constrained designs.
• Flexible timing control: Programmable CAS latency, selectable burst lengths and DLL support enable tuning for target performance and latency.
• Improved signal integrity: On-die termination and differential DQS options help maintain reliable high-speed data transfers.
• Concurrent bank architecture: Four internal banks and 4n prefetch architecture allow overlapping operations for improved throughput.

Why Choose MT47H32M16CC-5E L:B TR?

The MT47H32M16CC-5E L:B TR combines a 512 Mbit DDR2 SDRAM organization with low-voltage operation, programmable timing and package-level compactness to meet the needs of commercial-temperature embedded and module designs. Its on-die termination, DLL, and differential strobe options provide designers with the controls needed for reliable, high-speed operation.

This device is appropriate for engineers specifying parallel DDR2 memory in applications that require a compact FBGA package, configurable timing, and standard commercial operating range. Backed by Micron Technology's documented device features and timing options, it supports predictable integration into memory subsystems.

If you would like pricing, availability or a formal quote for the MT47H32M16CC-5E L:B TR, please request a quote or contact sales to discuss quantities and delivery.