MT47H32M16HR-187E:G TR

The MT47H32M16HR-187E:G TR is a 512 Mbit DDR2 SDRAM organized as 32M × 16 in an 84-ball thin FBGA package. It provides parallel DRAM memory in a compact FBGA footprint and is designed for systems requiring DDR2 technology at a 533 MHz clock frequency.

With a supply voltage range of 1.7 V to 1.9 V and an operating temperature range of 0°C to 85°C, this device targets applications that require mid-density DDR2 memory with defined timing and power characteristics.

Key Features

• Memory Core  DDR2 SDRAM technology organized as 32M × 16 for 512 Mbit total capacity.
• Performance  Supports a clock frequency of 533 MHz with an access time of 350 ps and a write cycle time (word page) of 15 ns for timing-sensitive designs.
• Voltage and Power  Operates from 1.7 V to 1.9 V, enabling operation within standard DDR2 supply ranges.
• Package and Mounting  Supplied in an 84-ball thin FBGA (84-TFBGA / 84-FBGA 8×12.5) package for PCB mounting and compact system integration.
• Interface  Parallel DRAM memory interface suitable for systems designed around DDR2 parallel memory architectures.
• Temperature Range  Rated for operation from 0°C to 85°C (TC), supporting general commercial-temperature applications.

Typical Applications

• Embedded memory subsystems  Use as parallel DDR2 memory where a 512 Mbit density and 32M × 16 organization meet system buffering or working memory needs.
• Consumer electronics  Integration into devices that require compact FBGA-mounted DDR2 memory with a 0°C to 85°C operating range.
• Communications and networking equipment  Suitable for designs that require DDR2 memory at a 533 MHz clock rate and deterministic access/write timing.

Unique Advantages

• 512 Mbit density in a compact FBGA  Provides 512 Mbit of DDR2 storage in an 84-ball FBGA package to save board area while delivering required capacity.
• High-frequency DDR2 support  Rated for a 533 MHz clock frequency to meet timing requirements in higher-speed DDR2 subsystems.
• Defined timing characteristics  Access time of 350 ps and a 15 ns write cycle time (word page) support predictable memory performance.
• Low-voltage operation  1.7 V to 1.9 V supply range aligns with DDR2 power domain designs for consistent power budgeting.
• Commercial temperature rating  0°C to 85°C operating temperature supports a wide range of standard commercial applications.

Why Choose MT47H32M16HR-187E:G TR?

The MT47H32M16HR-187E:G TR combines DDR2 SDRAM architecture, a 512 Mbit density (32M × 16), and an 84-FBGA package to provide a compact, mid-density parallel memory option. Its 533 MHz clock rating, defined access and write timings, and 1.7 V–1.9 V supply range make it suitable for systems that require DDR2 performance and predictable timing characteristics.

This device is appropriate for designers seeking a vendor-supplied DDR2 memory component from Micron Technology Inc. for integration into embedded, consumer, or communications equipment where the specified capacity, package, voltage, and temperature range meet design requirements.

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