MT47H32M16HR-25E AIT:G

The MT47H32M16HR-25E AIT:G is a 512 Mbit volatile memory device implemented as DDR2 SDRAM with a 32M × 16 organization. It provides a parallel DDR2 memory interface intended for high-speed buffering and working memory in systems that require DDR2-class performance.

Designed and manufactured by Micron Technology Inc., this device is automotive grade with AEC-Q100 qualification and an extended operating temperature range of -40°C to 95°C, delivering a combination of performance and environmental robustness for demanding applications.

Key Features

• Core Memory Architecture DDR2 SDRAM technology with a 32M × 16 memory organization, yielding a total capacity of 512 Mbit.
• Performance 400 MHz clock frequency and 400 ps access time provide DDR2-class bandwidth for fast data transfer and low-latency access.
• Timing Write cycle time (word page) specified at 15 ns for predictable write timing in system designs.
• Power Operates from a 1.7 V to 1.9 V supply, supporting low-voltage DDR2 system architectures.
• Reliability and Grade AEC-Q100 qualification and automotive grade designation; specified operating temperature range of -40°C to 95°C for harsh environments.
• Package Supplied in an 84-TFBGA / 84-FBGA (8 × 12.5 mm) package for compact board-level integration.
• Interface Parallel DRAM memory interface suitable for systems designed around DDR2 parallel signaling.

Typical Applications

• Automotive systems — AEC-Q100 qualification and -40°C to 95°C operating range enable use in automotive electronic control units and systems requiring robust memory under temperature stress.
• Embedded controllers — Parallel DDR2 interface and 400 MHz clocking support use as local working memory or frame buffers in embedded designs.
• Industrial equipment — Automotive-grade qualification and wide temperature range make the device suitable for industrial control and instrumentation requiring reliable DRAM storage.

Unique Advantages

• Automotive-qualified reliability: AEC-Q100 qualification combined with a -40°C to 95°C operating range supports deployment in temperature-challenged environments.
• DDR2 performance: 400 MHz clock frequency and 400 ps access time provide the bandwidth and responsiveness expected from DDR2 SDRAM devices.
• Compact package: 84-FBGA (8 × 12.5 mm) package enables high-density board layouts while maintaining DRAM capacity.
• Low-voltage operation: 1.7 V to 1.9 V supply reduces system power draw and aligns with DDR2 power domains.
• Predictable timing: Specified write cycle time of 15 ns supports deterministic memory timing in system-level designs.
• Standard parallel interface: Parallel DRAM interface simplifies integration into designs that use DDR2 signaling and memory controllers.

Why Choose MT47H32M16HR-25E AIT:G?

The MT47H32M16HR-25E AIT:G positions itself as a robust DDR2 SDRAM option where automotive-grade qualification, compact packaging, and predictable DDR2 performance are required. Its 512 Mbit capacity, 32M × 16 organization, and 400 MHz clocking deliver a balance of density and bandwidth for system memory needs.

This device is suited to engineers designing systems that demand AEC-Q100 qualification, wide operating temperatures, and low-voltage DDR2 operation. Backed by Micron Technology Inc., it offers a specification-driven choice for applications that prioritize reliability and standard DDR2 parallel interfacing.

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