MT47H32M16HR-25E AAT:G

The MT47H32M16HR-25E AAT:G is a 512 Mbit DDR2 SDRAM device organized as 32M × 16 with a parallel DDR2 interface in an 84-ball FBGA package. It implements a DDR2 SDRAM architecture with 4 internal banks, DLL alignment, and options for differential data strobes (DQS).

Targeted at systems requiring compact, automotive-capable DDR2 memory, the device delivers 400 MHz clocking, a 1.7–1.9 V supply range, and automotive qualification (AEC-Q100) with an operating temperature range up to 105°C.

Key Features

• Memory Core  512 Mbit DRAM organized as 32M × 16 with 4 internal banks and 4n-bit prefetch architecture for DDR2 operation.
• Performance  Clock frequency specified at 400 MHz with an access time of 400 ps and selectable burst lengths of 4 or 8. Programmable CAS latency and posted CAS (additive) latency are supported.
• Interface and Timing  JEDEC-standard 1.8 V I/O (SSTL_18-compatible), differential data strobe (DQS/DQS#) option, duplicate output strobe (RDQS) option for x8, and DLL to align DQ/DQS transitions with CK.
• Signal Integrity  On-die termination (ODT) and adjustable data-output drive strength reduce board-level termination complexity and help maintain timing margins.
• Power  VDD and VDDQ = 1.8 V ± 0.1 V (specified supply range 1.7 V – 1.9 V) for low-voltage DDR2 operation.
• Reliability and Timing  64 ms, 8192-cycle refresh and write timing such as write cycle time (word/page) of 15 ns; multiple speed-grade/timing options are available within the product family.
• Package and Mounting  84-ball thin FBGA package (8.0 mm × 12.5 mm footprint) for compact surface-mount integration.
• Temperature and Qualification  Automotive temperature option up to –40°C to 105°C (TC) and AEC-Q100 qualification are specified for vehicle-grade deployment; industrial temperature options are available within the device family.
• Compliance  RoHS-compliant marking is shown in the device family documentation.

Typical Applications

• Automotive systems  Automotive-grade DDR2 memory for vehicle electronics requiring AEC-Q100 qualification and operation to 105°C.
• Industrial equipment  Industrial applications that leverage DDR2 parallel memory and the device family’s industrial temperature options.
• Embedded systems with parallel DDR2 interfaces  Compact surface-mount designs needing a 512 Mbit parallel DDR2 memory in an 84-ball FBGA package.

Unique Advantages

• Automotive qualification (AEC-Q100):  AEC-Q100 qualification and an automotive temperature option support integration into vehicle-grade designs.
• High-speed DDR2 timing:  400 MHz clock frequency with programmable CAS latency and 4n-bit prefetch provides timing flexibility for DDR2 systems.
• On-die signal management:  DLL, DQS/DQS# options, and on-die termination help improve data alignment and signal integrity at the board level.
• Compact FBGA footprint:  84-ball FBGA (8 × 12.5 mm) enables high-density mounting in space-constrained designs.
• Low-voltage operation:  Specified VDD/VDDQ at 1.8 V ±0.1 V (1.7–1.9 V) aligns with JEDEC 1.8 V I/O standards for DDR2 systems.
• Configurable timing options:  Multiple speed grades and CAS latency settings within the product family allow designers to choose timing that matches system requirements.

Why Choose MT47H32M16HR-25E AAT:G?

The MT47H32M16HR-25E AAT:G provides a compact, automotive-qualified DDR2 memory option with 512 Mbit capacity, a 32M × 16 organization, and 400 MHz clocking. Its combination of on-die termination, DLL alignment, and programmable timing options make it suitable for designs that require robust DDR2 signaling and timing flexibility in constrained footprints.

This device is well suited to designers sourcing automotive or industrial-grade parallel DDR2 memory where temperature range, AEC-Q100 qualification, and a small FBGA package are key considerations for long-term deployment and integration.

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