MT47H32M16HR-25E AAT:G TR

The MT47H32M16HR-25E AAT:G TR is a 512 Mbit DDR2 SDRAM organized as 32M × 16 with a parallel memory interface in an 84-ball FBGA package. It is designed for applications requiring mid-density volatile memory with DDR2 timing and a compact BGA footprint.

Key attributes include 400 MHz clock operation, an access time of 400 ps, AEC-Q100 qualification and an extended operating temperature range of −40 °C to 105 °C, supporting use in demanding thermal and reliability environments.

Key Features

• Technology DDR2 SDRAM architecture providing standard DDR2 timing and signaling in a parallel memory interface.
• Memory Organization & Capacity 512 Mbit capacity configured as 32M × 16 for parallel data access.
• Performance 400 MHz clock frequency with a 400 ps access time and a 15 ns write cycle time (word page) for predictable DDR2 timing.
• Power Low-voltage operation with a supply range of 1.7 V to 1.9 V.
• Package 84-ball thin FBGA (84-TFBGA / 84-FBGA, 8 × 12.5 mm footprint) for compact board-level integration.
• Reliability & Temperature AEC-Q100 qualification and an operating temperature range of −40 °C to 105 °C for use in temperature-stressed and high-reliability applications.
• Memory Type Volatile DRAM suitable for buffering and temporary data storage in embedded systems.

Typical Applications

• Automotive Electronics AEC-Q100 qualification and extended temperature range enable use in automotive control modules, telematics and infotainment buffers.
• Industrial Systems Suitable for industrial controllers and instrumentation requiring DDR2 buffering with wide operating temperatures.
• Embedded Processing Secondary or system memory for embedded processors and SoC designs that use parallel DDR2 interfaces.

Unique Advantages

• Automotive-grade qualification: AEC-Q100 qualification combined with −40 °C to 105 °C operating range supports deployment in harsh environments.
• High-frequency DDR2 operation: 400 MHz clock frequency and 400 ps access time deliver consistent DDR2 performance characteristics.
• Compact BGA footprint: 84-ball FBGA (8 × 12.5 mm) enables dense board layouts and space-constrained designs.
• Low-voltage operation: 1.7 V–1.9 V supply reduces power rail requirements and aligns with low-voltage DDR2 systems.
• Predictable timing: 15 ns write cycle time (word page) provides known timing parameters for system timing budgets.
• Parallel interface: Standard parallel DDR2 interface for compatibility with DDR2-capable memory controllers and legacy DDR2 designs.

Why Choose IC DRAM 512MBIT PARALLEL 84FBGA?

The MT47H32M16HR-25E AAT:G TR positions itself as a mid-density DDR2 DRAM option that combines DDR2 performance with automotive-grade qualification and a compact FBGA package. Its specified clock frequency, access time and write cycle parameters make it suitable for designs requiring deterministic DDR2 timing and reliable operation across a wide temperature range.

This device is appropriate for designers in automotive, industrial and embedded markets who need a 512 Mbit volatile memory with parallel DDR2 interface, low-voltage operation and a small PCB footprint. Sourcing this part from Micron Technology Inc. provides a known manufacturer for component traceability in high-reliability designs.

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