MT47H32M16CC-5E:B TR

The MT47H32M16CC-5E:B TR is a 512 Mbit DDR2 SDRAM organized as 32M × 16 with a parallel memory interface in an 84-ball FBGA package. It implements DDR2 SDRAM architecture with features from the Micron 512Mb family, including a 4n-bit prefetch architecture, DLL, and selectable burst lengths.

This device is intended for commercial-temperature systems requiring a compact board-level DDR2 memory solution operating at 1.7–1.9 V and a specified clock frequency of 200 MHz. Typical use is where a 512 Mbit parallel DDR2 memory with programmable timing and on-die termination is required.

Key Features

• Memory Core and Organization 512 Mbit DDR2 SDRAM organized as 32M × 16 with 4 internal banks and a 4n-bit prefetch architecture.
• Performance / Timing Clock frequency specification of 200 MHz, access time 600 ps, and write cycle time (word page) of 15 ns; supports programmable CAS latency and selectable burst lengths (4 or 8) per datasheet options.
• Power Supply VDD and VDDQ operating range of 1.7 V to 1.9 V (JEDEC-standard 1.8 V ±0.1 V).
• Interface and Signaling Parallel DDR2 interface with JEDEC-standard 1.8 V I/O (SSTL_18-compatible) and optional differential data strobe (DQS/DQS#) per datasheet features.
• Signal Integrity and Timing Control On-die termination (ODT) and an internal DLL to align DQ and DQS transitions with CK; adjustable data-output drive strength.
• Refresh and Reliability 8,192-cycle refresh with 64 ms refresh interval (64ms, 8,192-cycle refresh specified in datasheet).
• Package 84-ball FBGA package (12 mm × 12.5 mm) — listed as 84-TFBGA / 84-FBGA in product data.
• Operating Temperature Commercial temperature range: 0°C to 85°C (T_C = 0°C to 85°C) as specified for this device variant.

Typical Applications

• Board-level system memory — Provides 512 Mbit of DDR2 SDRAM for embedded designs requiring parallel DDR2 memory in an 84-ball FBGA package.
• Buffering and data storage — Used where programmable CAS latency, burst lengths, and on-die termination are required for transient data buffering.
• Commercial embedded systems — Suited to commercial-temperature electronic equipment operating within 0°C to 85°C.

Unique Advantages

• Compact FBGA footprint: 84-ball FBGA (12 mm × 12.5 mm) package for dense board-level integration where board area is constrained.
• <strong JEDEC-standard 1.8 V I/O: Operates at 1.7–1.9 V (VDD, VDDQ) supporting SSTL_18-compatible signaling for compatibility with standard DDR2 interfaces.
• Flexible timing configuration: Programmable CAS latency, selectable burst lengths, and an internal DLL enable timing tuning to match system requirements.
• Signal integrity features: On-die termination and adjustable drive strength reduce external termination complexity and help manage signal quality.
• Defined refresh behavior: 64 ms, 8,192-cycle refresh ensures predictable data retention and refresh scheduling in system design.

Why Choose IC DRAM 512MBIT PARALLEL 84FBGA?

The MT47H32M16CC-5E:B TR delivers a compact, board-level DDR2 memory option with a defined commercial operating range, JEDEC-standard signaling, and configurable timing features. Its 32M × 16 organization, on-die termination, and DLL support make it suitable for systems needing a 512 Mbit parallel DDR2 device with predictable timing and refresh behavior.

This device is appropriate for designers specifying commercial-temperature DDR2 memory in an 84-ball FBGA package who require programmable latency, selectable burst operation, and standard 1.8 V I/O. The product’s documented electrical and timing parameters support straightforward integration into systems requiring these exact specifications.

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