MT47H32M16CC-5E IT:B TR

The MT47H32M16CC-5E IT:B TR is a 512 Mbit DDR2 SDRAM device organized as 32M × 16 with a parallel memory interface in an 84-ball FBGA package. It is designed for systems requiring DDR2 memory with a 1.7–1.9 V supply range, a 200 MHz clock frequency and measured access time of 600 ps.

Built on a 4n-bit prefetch architecture with four internal banks, DLL alignment and on-die termination, this device provides configurable timing (programmable CAS latencies and selectable burst lengths) and signal-integrity features useful for embedded DDR2 memory subsystems and extended-temperature industrial designs.

Key Features

• Memory and Architecture  512 Mbit DDR2 SDRAM organized as 32M × 16 with 4 internal banks and 4n-bit prefetch architecture for concurrent bank operation.
• Performance and Timing  Supports programmable CAS latency, posted CAS additive latency, selectable burst lengths (4 or 8) and a 200 MHz clock frequency; typical access time listed at 600 ps and word/page write cycle time of 15 ns.
• Power and Signaling  Low-voltage operation with a 1.7 V–1.9 V supply range (JEDEC-standard 1.8 V I/O, SSTL_18-compatible) and differential DQS/DQS# options for timing alignment.
• Signal Integrity  Integrated DLL to align DQ and DQS transitions with CK and on-die termination (ODT) to reduce termination components and improve signal quality.
• System Features  WRITE latency defined relative to READ latency (WRITE = READ − 1 tCK) and support for 64 ms / 8,192-cycle refresh; adjustable data-output drive strength.
• Package  84-ball FBGA in a 12 mm × 12.5 mm footprint (84-TFBGA / 84-FBGA), optimized for compact PCB layouts.
• Operating Temperature  Industrial temperature option with specified operating-case temperature range of −40°C to 95°C (IT).
• Standards and Compliance  JEDEC-clock jitter support and RoHS-compliant option listed in the device documentation.

Typical Applications

• Embedded DDR2 memory subsystems  Provides 512 Mbit x16 parallel DRAM capacity in a compact 84-ball FBGA for systems that implement DDR2 memory interfaces.
• Industrial equipment  The industrial temperature option and wide operating-case range (−40°C to 95°C) suit extended-temperature control and instrumentation environments.
• Buffering and temporary data storage  Programmable CAS latency, selectable burst lengths and internal bank architecture support use as frame or packet buffers in designs requiring predictable DDR2 timing.

Unique Advantages

• Low-voltage DDR2 operation: 1.7 V–1.9 V supply supports JEDEC-standard 1.8 V I/O while minimizing power draw compared with higher-voltage alternatives.
• Flexible timing configuration: Programmable CAS latencies, posted CAS additive latency and selectable burst lengths allow tuning of latency and throughput for target system requirements.
• Integrated signal integrity features: On-die termination, DLL alignment and differential DQS options reduce external termination complexity and help maintain signal timing on high-speed buses.
• Compact FBGA package: 84-ball FBGA (12 mm × 12.5 mm) provides high-density integration for size-constrained PCBs.
• Industrial-temperature support: Specified for −40°C to 95°C case temperature (IT), enabling deployment in extended-temperature environments.

Why Choose IC DRAM 512MBIT PARALLEL 84FBGA?

The MT47H32M16CC-5E IT:B TR positions itself as a configurable DDR2 memory building block for designs that need 512 Mbit of parallel DRAM in a compact FBGA footprint. Its combination of low-voltage operation, configurable timing (CL and burst lengths), internal bank architecture and signal-integrity features (DLL, ODT, differential DQS) supports reliable integration into DDR2-based memory subsystems.

This device is suited to engineers and procurement teams specifying embedded memory for industrial and other extended-temperature applications that require predictable timing, compact packaging and standardized 1.8 V I/O signaling. Its documented timing grades, supply range and package details help support long-term design planning and parts selection.

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