MT47H32M16CC-5E IT:B

The MT47H32M16CC-5E IT:B is a 512 Mbit DDR2 SDRAM organized as 32M × 16 with a parallel memory interface in an 84-ball FBGA package. It implements DDR2 core architecture and JEDEC-standard 1.8V I/O for systems requiring standard DDR2 memory building blocks.

Designed for industrial operating conditions, the device combines DDR2 timing flexibility, low-voltage operation, on-die termination and a compact FBGA footprint to support memory expansion in embedded and industrial applications that require a parallel DDR2 memory interface.

Key Features

• Memory Core — 512 Mbit DDR2 SDRAM organized as 32M × 16 with 4 internal banks and a 4n-bit prefetch architecture for standard DDR2 data handling.
• Interface & Timing — JEDEC-standard 1.8V I/O (SSTL_18-compatible) with programmable CAS latency, selectable burst lengths (4 or 8), and support for JEDEC clock jitter specifications. Timing grade indicated by part suffix -5E.
• Voltage & Performance — Operating VDD/VDDQ nominally +1.8V (specified 1.7V–1.9V) with listed clock frequency of 200 MHz and access time of 600 ps; write cycle time (word page) specified at 15 ns.
• Data Integrity & Signal — DLL to align DQ and DQS transitions, differential data strobe (DQS/DQS#) option, and adjustable data-output drive strength; on-die termination (ODT) supported.
• Package — 84-ball thin FBGA (84-TFBGA) supplier device package footprint 12 mm × 12.5 mm suited for high-density board layouts.
• Operating Range — Industrial temperature option with device operating temperature range of −40°C to 95°C (TC) documented for the IT variant.

Typical Applications

• Industrial control systems — Parallel DDR2 memory expansion where industrial temperature operation (−40°C to 95°C TC) and a compact FBGA footprint are required.
• Embedded memory modules — Use as a 512 Mbit DDR2 storage element in embedded platforms that leverage standard JEDEC 1.8V DDR2 I/O and programmable timing.
• Board-level DDR2 subsystems — Integration into custom memory subsystems requiring a 32M × 16 organization and on-die termination for signal integrity.

Unique Advantages

• JEDEC-standard DDR2 I/O: SSTL_18-compatible 1.8V signaling ensures alignment with industry DDR2 interfaces and timing specifications.
• Industrial temperature option: Documented −40°C to 95°C (TC) operating range in the IT variant for deployments in harsh ambient conditions.
• Compact FBGA package: 84-ball FBGA (12 mm × 12.5 mm) provides a small board footprint for high-density designs.
• Integrated signal timing features: DLL, differential DQS option and adjustable drive strength help with timing alignment and board-level signal tuning.
• On-die termination and refresh management: ODT and standard 64 ms/8,192-cycle refresh reduce external termination and refresh management complexity.
• Low-voltage operation: Nominal +1.8V supply range (1.7V–1.9V) supports low-power DDR2 system architectures.

Why Choose MT47H32M16CC-5E IT:B?

The MT47H32M16CC-5E IT:B combines standard DDR2 architecture, a 32M × 16 organization and industrial-temperature support in a compact 84-ball FBGA package. Its JEDEC-compatible 1.8V I/O, programmable timing options and on-die features such as DLL and ODT provide a straightforward, standards-based memory component for designers building parallel DDR2 memory subsystems.

This device is appropriate for engineers specifying a 512 Mbit DDR2 component where documented industrial temperature range, standard signaling and a small-footprint FBGA package are required. The Micron-documented timing, voltage and package data support consistent integration into JEDEC-aligned designs.

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