MT47H32M16CC-37E:B

The MT47H32M16CC-37E:B is a 512 Mbit DDR2 SDRAM device organized as 32M × 16 with a parallel memory interface in an 84-ball FBGA package. It implements DDR2 architecture with 4 internal banks and features designed for synchronous high-speed memory applications requiring programmable timing and burst access.

This device targets designs that need a compact, parallel DDR2 memory component with programmable CAS latency, selectable burst lengths, on-die termination and standard 1.8 V I/O operation across a commercial temperature range.

Key Features

• Memory Type & Organization 512 Mbit DRAM organized as 32M × 16 with 4 internal banks for concurrent bank operation.
• DDR2 Architecture 4n-bit prefetch architecture, DLL to align DQ and DQS transitions with CK, programmable CAS latency (CL) and posted CAS additive latency (AL) to support flexible timing regimes.
• Data Strobe & I/O Differential data strobe (DQS, DQS#) option and JEDEC‑standard 1.8 V I/O (SSTL_18-compatible) for DDR2 signaling; adjustable data-output drive strength and on-die termination (ODT) are supported.
• Performance & Timing Clock frequency listed at 267 MHz, access time 500 ps, and write cycle (word page) time of 15 ns; selectable burst lengths of 4 or 8 and WRITE latency = READ latency − 1 CK.
• Voltage & Power Supply voltage range VDD = 1.7 V to 1.9 V (VDDQ = 1.8 V ±0.1 V supported in datasheet), matching DDR2 operating levels.
• Refresh & Reliability 64 ms, 8,192-cycle refresh and support for JEDEC clock jitter specifications to maintain data integrity across standard refresh intervals.
• Package & Mounting 84‑TFBGA (84‑ball FBGA) package, supplier device package dimensions 12 mm × 12.5 mm, designed for BGA mounting on printed circuit boards.
• Operating Temperature Commercial temperature range: 0 °C to 85 °C (T_C).

Unique Advantages

• Compact high-density memory: 512 Mbit capacity in an 84‑ball FBGA minimizes PCB footprint while providing substantial DRAM capacity.
• Flexible timing configuration: Programmable CAS latency, posted CAS AL and selectable burst lengths let designers optimize read/write timing for system needs.
• DDR2-standard signaling: JEDEC 1.8 V I/O compatibility and differential DQS options simplify integration with standard DDR2 memory controllers.
• Signal integrity features: On-die termination and adjustable drive strength support improved signal integrity on high-speed parallel interfaces.
• Concurrent bank operation: Four internal banks and 4n‑bit prefetch architecture enable efficient data throughput for burst and page accesses.

Why Choose IC DRAM 512MBIT PAR 84FBGA?

The MT47H32M16CC-37E:B positions itself as a straightforward DDR2 SDRAM building block for designs requiring 512 Mbit of parallel volatile memory in a compact FBGA package. Its combination of programmable timing, DDR2 signaling options and on-die termination provides designers control over performance and signal integrity within the specified commercial temperature range.

This part is suitable for projects that need a fixed 512 Mbit DDR2 x16 memory device with standard 1.8 V operation, configurable latency and burst behavior, and an 84‑ball FBGA footprint for space-constrained PCBs.

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