MT47H32M16CC-37E L:B

The MT47H32M16CC-37E L:B is a 512Mbit DDR2 SDRAM device organized as 32M × 16 with a parallel memory interface in an 84-ball FBGA package. It implements DDR2 architecture with a 4n-bit prefetch and four internal banks to support concurrent access patterns common to system memory applications.

Designed for commercial-temperature systems, this device targets designs that require standard 1.8V DDR2 signaling, programmable timing options, and compact FBGA mounting for space-constrained boards.

Key Features

• Core / Memory Architecture DDR2 SDRAM organized as 32M × 16 (512 Mbit) with 4 internal banks and 4n-bit prefetch architecture for DDR2 operation.
• Timing and Performance Data rate options per family timing table include DDR2 speeds up to those supported at CL settings; part-specific clock frequency listed as 267 MHz and access time of 500 ps with a write cycle time (word page) of 15 ns.
• Voltage and I/O VDD = 1.8 V ±0.1 V and VDDQ = 1.8 V ±0.1 V with JEDEC-standard 1.8V I/O (SSTL_18-compatible) signaling and support for JEDEC clock jitter specification.
• Data integrity and I/O options Features include DLL to align DQ and DQS with CK, differential data strobe (DQS/DQS#) options, and on-die termination (ODT) to simplify board termination strategies.
• Programmability Programmable CAS latency (CL), posted CAS additive latency (AL), selectable burst lengths (4 or 8), and adjustable data-output drive strength provide timing flexibility for system design trade-offs.
• Package and Mounting 84-ball FBGA package (12 mm × 12.5 mm) suitable for compact PCB layouts; supplier device package listed as 84-FBGA (12×12.5).
• Operating Conditions Commercial operating temperature range specified as 0°C to 85°C (TC). The product family also documents industrial and automotive temperature options for other variants.

Typical Applications

• System Memory for DDR2 Platforms Use as parallel DDR2 system memory where a 512 Mbit, x16 organization is required.
• Embedded and Consumer Electronics Suitable for embedded designs requiring standard 1.8V DDR2 signaling and compact FBGA mounting.
• Commercial-Temperature Products Designed for equipment and modules operating within the commercial temperature range of 0°C to 85°C.

Unique Advantages

• Standard DDR2 signaling: JEDEC-standard 1.8V I/O and support for JEDEC clock jitter make integration with DDR2-compatible memory controllers straightforward.
• Flexible timing control: Programmable CAS latency, additive latency and selectable burst lengths allow tuning for throughput or latency depending on system needs.
• On-die termination and DLL: ODT and DLL features reduce external termination complexity and help align data strobes with the clock for reliable high-speed transfers.
• Compact FBGA package: 84-ball FBGA (12 × 12.5 mm) provides a dense form factor for space-constrained PCB designs.
• Low-voltage operation: 1.8 V nominal supply (VDD/VDDQ) supports lower-power DDR2 operation compared with legacy higher-voltage memories.
• Concurrent bank operation: Four internal banks enable overlapping operations to improve effective throughput for bursty access patterns.

Why Choose IC DRAM 512MBIT PAR 84FBGA?

The MT47H32M16CC-37E L:B provides a compact, commercially rated 512 Mbit DDR2 memory option with flexible timing, on-die termination, and standard 1.8 V signaling. Its x16 organization, programmable latency options, and FBGA packaging make it suitable for designs that require standard DDR2 parallel memory in a small footprint.

This device is aimed at designers and procurement teams specifying DDR2 memory for commercial-temperature applications that need predictable timing options, lower-voltage operation, and a compact BGA mounting. The broader product family includes variants and temperature options for different system requirements.

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