MT47H32M16CC-37E L:B TR

The MT47H32M16CC-37E L:B TR is a 512 Mbit DDR2 SDRAM organized as 32M × 16 with a parallel memory interface. It implements DDR2 architecture with 4 internal banks and features such as DLL alignment and selectable burst lengths to support synchronous memory operations.

Designed for board-level integration, this device operates from a 1.7 V to 1.9 V supply, in an 84-ball FBGA package (12 mm × 12.5 mm), and is specified for commercial temperature operation (0 °C to 85 °C).

Key Features

• Core / Architecture  DDR2 SDRAM core with 4n-bit prefetch architecture, DLL for DQ/DQS alignment, and 4 internal banks for concurrent operation.
• Memory Organization  512 Mbit capacity organized as 32M × 16 with parallel memory interface and an 8K refresh count for the 32M × 16 configuration.
• Timing & Performance  Specified clock frequency of 267 MHz, access time of 500 ps, and a write cycle time (word page) of 15 ns; programmable CAS latency and selectable burst lengths of 4 or 8.
• Interface & Signaling  JEDEC-standard 1.8 V I/O (SSTL_18-compatible) signaling with optional differential data strobe (DQS/DQS#) and duplicate output strobe (RDQS) option noted in the device family documentation.
• Power  Operates from a 1.7 V to 1.9 V supply (Vdd, VddQ ≈ 1.8 V nominal).
• Package & Mounting  84-ball FBGA package (12 mm × 12.5 mm) for compact board-level mounting; package case referenced as 84-TFBGA.
• Reliability & Options  Supports on-die termination (ODT), programmable drive strength and standard DDR2 refresh options as documented for this device family.
• Temperature Range  Commercial operating temperature: 0 °C to 85 °C (T_C).

Typical Applications

• Embedded memory subsystems  Use as a 512 Mbit parallel DDR2 DRAM device where a 32M × 16 organization and 1.8 V operation are required.
• On-board frame or buffer memory  Suitable for designs that require synchronous burst access with selectable burst lengths (4 or 8) and programmable CAS latency.
• Commercial electronics  Integration in systems specified for commercial temperature operation (0 °C to 85 °C) and FBGA mounting.

Unique Advantages

• Compact FBGA footprint: 84-ball FBGA (12 mm × 12.5 mm) package enables high-density board integration.
• Low-voltage operation: 1.7 V to 1.9 V supply range supports standard 1.8 V DDR2 I/O signaling.
• Flexible timing control: Programmable CAS latency, DLL alignment and selectable burst lengths provide timing adaptability for varied system requirements.
• Synchronous DDR2 architecture: 4n-bit prefetch and 4 internal banks allow concurrent operations aligned with DDR2 SDRAM behavior.
• Commercial temperature rating: Specified operation from 0 °C to 85 °C for designs targeting commercial-grade environments.

Why Choose IC DRAM 512MBIT PAR 84FBGA?

The MT47H32M16CC-37E L:B TR offers a compact, 512 Mbit DDR2 SDRAM solution in a 32M × 16 organization designed for applications requiring synchronous parallel memory with programmable timing. Its 1.7 V–1.9 V supply range, DLL alignment, and selectable burst modes make it suitable for systems that need configurable DDR2 behavior within a commercial temperature range.

This device is appropriate for designers specifying board-level FBGA memory for embedding into commercial electronic products where a 512 Mbit DDR2 memory element with 84-ball packaging and defined timing characteristics is required.

To request a quote or submit a purchasing inquiry for the MT47H32M16CC-37E L:B TR, please contact sales or request a formal quotation through your procurement channel.